초고온용 다결정 3C-SiC 마이크로 압력센서의 제작
Fabrication of polycrystalline 3C-SiC micro pressure sensors for hightemperature applications
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초록
High temperature micro pressure sensors were fabricated by using polycrystalline 3C-SiC piezoresistors grown on oxidized SOI substrates by APCVD. These have been made by bulk micromachining under 1 × 1 mm2 diaphragm and Si membrane thickness of 20 μm. The pressure sensitivity of implemented pressure sensors was 0.1 mV/V·bar. The non- linearity and the hysteresis of sensors were ± 0.44 %·FS and 0.61 % · FS. In the temperature range of 25 oC ~ 400 oC with 5 bar FS, TCS (temperature coefficient of sensitivity), TCR (temperature coefficient of resistance), and TCGF (temperaturecoefficient of gauge factor) of the sensor were −1867 ppm/oC, −792 ppm/oC, and −1042 ppm/oC, respectively.
Abstract
High temperature micro pressure sensors were fabricated by using polycrystalline 3C-SiC piezoresistors grown on oxidized SOI substrates by APCVD. These have been made by bulk micromachining under 1 × 1 mm2 diaphragm and Si membrane thickness of 20 μm. The pressure sensitivity of implemented pressure sensors was 0.1 mV/V·bar. The non- linearity and the hysteresis of sensors were ± 0.44 %·FS and 0.61 % · FS. In the temperature range of 25 oC ~ 400 oC with 5 bar FS, TCS (temperature coefficient of sensitivity), TCR (temperature coefficient of resistance), and TCGF (temperaturecoefficient of gauge factor) of the sensor were −1867 ppm/oC, −792 ppm/oC, and −1042 ppm/oC, respectively.
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