다결정 실리콘 카바이드를 이용한 마이크로 유량센서
Micro flow sensor using polycrystalline silicon carbide
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초록
A thermal flow sensor has been fabricated and characterized, consisting of a center resistive heater surrounded by two upstream and one downstream temperature sensing resistors. The heater and temperature sensing resistors are fabricated from nitrogen-doped(n-type) polycrystalline silicon carbide(poly-SiC) deposited by LPCVD(low pressure chemical vapor deposition) on LPCVD silicon nitride films on a Si substrate. Cavities were etched into the Si substrate from the front side to create suspended silicon nitride membranes carrying the poly-SiC elements. One upstream sensor is located 50 μm from the heater and has a sensitivity of 0.73 Ω/sccm with ~15 ms rise time in a dynamic range of 1000 sccm. N-type poly-SiC has a linear negative temperature coefficient and a TCR(temperature coefficient of resistance) of −1.24×10−3/℃ from room temperature to 100℃.
Abstract
A thermal flow sensor has been fabricated and characterized, consisting of a center resistive heater surrounded by two upstream and one downstream temperature sensing resistors. The heater and temperature sensing resistors are fabricated from nitrogen-doped(n-type) polycrystalline silicon carbide(poly-SiC) deposited by LPCVD(low pressure chemical vapor deposition) on LPCVD silicon nitride films on a Si substrate. Cavities were etched into the Si substrate from the front side to create suspended silicon nitride membranes carrying the poly-SiC elements. One upstream sensor is located 50 μm from the heater and has a sensitivity of 0.73 Ω/sccm with ~15 ms rise time in a dynamic range of 1000 sccm. N-type poly-SiC has a linear negative temperature coefficient and a TCR(temperature coefficient of resistance) of −1.24×10−3/℃ from room temperature to 100℃.
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