본문 바로가기
KERD
논문KCI 등재

원자층 증착법 기반 양이온-음이온 이중 도핑 효과에 따른 ZnO 박막의 전기적 특성 비교 연구

An Investigation of Electrical Properties in Cation-anion Codoped ZnO by Atomic Layer Deposition

박형호|김건우|강경문|Akendra Singh Chabungbam|김동은
한국마이크로전자및패키징학회 (The Microelectronics And Packaging Society)|2023.09|마이크로전자 및 패키징학회지 (Jornal of the Microelectronics and Packaging Society)|제30권 제3호|pp. 94-101|DOI doi.org/10.6117/kmeps.2023.30.3.094

1

조회

0

다운로드

0

인용

0

참고문헌

키워드

ZnOatomic layer depositioncodoping
주제분류재료공학

초록

투명 전도성 산화물(TCO)를 대체할 수 있는 대표적인 물질로 알려진 ZnO는 3.37 eV의 bandgap과 60 meV의exciton binding energy를 가진 반도체 물질이다. 본 연구에서는 투명 전극으로 사용하기 위한 높은 전기적 특성을 확보하기 위해 원자층 증착법을 기반으로 양이온과 음이온의 단일 및 이중 도핑에 따라 성장한 ZnO 박막을 제작하였다. 3가 양이온 Al, Ga과 음이온 F이 단일 및 이중 도핑된 ZnO 박막의 구조적, 광학적 특성 및 전기적 특성을 확인하였다. 단일 도핑의 경우, ZnO에 donor로 작용하는 Al, Ga, F에 의해 캐리어 농도가 도핑 전에 비해 증가하였고 근자외선 영역에서의band-edge absorption이 증가하는 것을 확인하였다. 단일 도핑 중에서는 F이 ZnO 내 산소 공공 자리에 passivation 되면서높은 mobility와 함께 가장 높은 전도도를 보였다. 이중 도핑의 경우, 각 원소들의 도핑 효과가 더해지면서 단일 도핑에 비해 높은 전기적 특성을 보였다. 결과적으로 Ga-F에 비해 Al-F 도핑 시 ionic radius 차이에 의한 lattice distortion 감소 및delocalized 된 전자 상태의 증가로 가장 낮은 비저항 값을 보였으며 PDOS 분석을 통한 시뮬레이션 데이터로 측정 값과 일치하는 결과를 확인했다.

Abstract

Zinc oxide(ZnO) is a semiconductor material with a bandgap of 3.37 eV and an exciton binding energy of 60 meV for various applications. Recently ZnO has been proven to enhance its electrical properties for utilization as an alternative for transparent conducting oxide (TCO) materials. In this study, cation(Al, Ga)-anion(F) single and double doped ZnO thin films were grown by atomic layer deposition (ALD) to enhance the electrical properties. The structural and optical properties of doped ZnO thin films were analyzed, and doping effects were confirmed to electrical characteristics. In single doped ZnO, it was observed that the carrier concentration was increased after doping, acting as a donor to ZnO. Among the single doping elements, F doped ZnO(FZO) showed the highest mobility and conductivity due to the passivation effect of oxygen vacancies. In the case of double doping, higher electrical characteristics were observed compared to single doping. Among the samples, Al-F doped ZnO(AFZO) exhibited the lowest resistance value. This results can be attributed to an increase in delocalized electron states and a decrease in lattice distortion resulting from the differences in ionic radius. The partial density of states(PDOS) was also analyzed and observed to be consistent with the experimental results.

참고문헌 (47)

  1. J. Crupi, "Optimization of ZnO : Al", Ag, Thin Solid Films, pp.2012, 520(13)[DOI]
  2. Ü. Özgür, "A comprehensive review of ZnO materials and devices", J. Appl. Phys, 98(4) (2005)
  3. 3 J. Ma, "Optical and electronic properties of transparent conducting ZnO and ZnO : Al films prepared by evaporating method", Thin Solid Films, 357, pp.98~101 (1999)
  4. B. Efafi, "A method for optimizing the electrical conductivity of Al : ZnO TCO films", Mater. Lett, 195, pp.52~54 (2017)
  5. K. Ellmer, "Carrier transport in polycrystalline ITO and ZnO : Al II : The influence of grain barriers and boundaries", Thin Solid Films, 516(17), pp.5829~5835 (2008)
  6. K. Matsubara, "ZnO transparent conducting films deposited by pulsed laser deposition for solar cell applications", Thin Solid Films, 431, pp.369~372 (2003)
  7. Z. Chen, "Fabrication and vacuum annealing of transparent conductive Ga-doped Zn0. 9Mg0. 1O thin films prepared by pulsed laser deposition technique", Appl. Surf. Sci, 252, pp.8657~8661 (2006)
  8. H. C. Han, "Structural, optical, electrical properties of ZnO thin films with Zn concentration", J. Korean Ceram. Soc, 40, pp.1113~1119 (2003)
  9. M. C. Jun, "Comparative studies of Al-doped ZnO and Ga-doped ZnO transparent conducting oxide thin films", Nanoscale Res. Lett, 7, pp.1~6 (2012)
  10. Kyu Ung Sim, "Effects of dopant (Al, Ga, and In) on the characteristics of ZnO thin films prepared by RF magnetron sputtering system", Current Applied Physics, 10(3), pp.463~467 (2010), 한국물리학회
  11. G. P. Papari, "Morphological, Structural, and Charge Transfer Properties of F-Doped ZnO : A Spectroscopic Investigation", J. Phys. Chem. C, 121(29), pp.16012~16020 (2017)
  12. D. -J. Lee, "Structural and Electrical Properties of Atomic Layer Deposited Al-Doped ZnO Films", Adv. Funct. Mater, 21(3), pp.448~455 (2011)
  13. H. Serier, "Investigation of Ga Substitution in ZnO Powder and Opto-Electronic Properties", Inorg. Chem, 49(15), pp.6853~6858 (2010)
  14. J. Hu, "Textured fluorine-doped ZnO films by atmospheric pressure chemical vapor deposition and their use in amorphous silicon solar cells", Solar cells, 30(1-4), pp.437~450 (1991)
  15. J. Rousset, "Extrinsic Doping of Electrodeposited Zinc Oxide Films by Chlorine for Transparent Conductive Oxide Applications", Chem. Mater, 21(3), pp.534~540 (2009)
  16. Y. -J. Choi, "A simple approach to the fabrication of fluorine-doped zinc oxide thin films by atomic layer deposition at low temperatures and an investigation into the growth mode", J. Mater. Chem. C, 2(1), pp.98~108 (2014)
  17. 17. Y. H. Kim, "Characteristics of ZnO : Al thin films co-doped with hydrogen and fluorine", Appl. Surf. Sci, 256(16), pp.5102~5107 (2010)
  18. B. Houng, "Effect of discharge power density on the properties of Al and F co-doped ZnO thin films prepared at room temperature", J. Electroceramics, 29, pp.1~7 (2012)
  19. K. -M. Kang, "Al", F codoping effect on the structural, electrical, and optical properties of ZnO films grown via atomic layer deposition, 2021, pp.535, 147734~
  20. K. -M. Kang, "Study on properties of Ga", F-co-doped ZnO thin films prepared using atomic layer deposition, 2018, pp.660, 913~919
  21. M. Godlewski, "ZnO layers grown by Atomic Layer Deposition : A new material for transparent conductive oxide", Thin Solid Fims, 518(4), pp.1145~1148 (2009)
  22. P. J. Reed, "Enhanced Electrochemical Stability of TiO2-Protected, Aldoped ZnO Transparent Conducting Oxide Synthesized by Atomic Layer Deposition", ACS Appl. Mater. Interfaces, 10(50), pp.43691~43698 (2018)
  23. T. Tynell, "Atomic layer deposition of Al-doped ZnO thin films", J. Vac. Sci, 31(1) (2013)
  24. D. -J. Lee, "Structural and Electrical Properties of Atomic Layer Deposited Al-Doped ZnO Films", Adv. Funct. Mater, 21(3), pp.448~455 (2011)
  25. P. Nunes, "Effect of different dopant elements on the properties of ZnO thin films", Vacuum, 64(3-4), pp.281~285 (2002)
  26. Gil Mo Nam, "Characterization of F- and Al-codoped ZnO Transparent Conducting Thin Film prepared by Sol-Gel Spin Coating Method", 한국세라믹학회지, 53(3), pp.338~342 (2016), 한국세라믹학회
  27. T. S. Moss, "The Interpretation of the Properties of Indium Antimonide", Proc. Phys. Soc, 67(10), pp.775~ (1954)
  28. J. Y. Kim, "Effective atomic layer deposition procedure for Aldopant distribution in ZnO thin films", J. Vac. Sci. Technol. A, 28(5), pp.1111~1114 (2010)
  29. H. Tanaka, "Low resistivity polycrystalline ZnO : Al thin films prepared by pulsed laser deposition", J. Vac. Sci. Technol. A, 22(4), pp.1757~1762 (2004)
  30. S. Kumar, "Structural, optical and magnetic characterization of Ru doped ZnO nanorods", J. Alloys Compd, 588, pp.705~709 (2014)
  31. H. L. Hartnagel, "Semiconducting Transparent Thin Films" (1995), Institute of Physics Publishing
  32. Y. Kim, "Optical and electronic properties of post-annealed ZnO : Al thin films", Appl. Phys. Lett, 96(17) (2010)
  33. N. Tu, "Surface oxygen vacancies of ZnO : A facile fabrication method and their contribution to the photoluminescence", J. Alloys Compd, 791, pp.722~729 (2019)
  34. K. -M. Kang, "Effect of Atomic Layer Deposition Temperature on the Growth Orientation, Morphology, and Electrical, Optical, and Band-Structural Properties of ZnO and Fluorine-Doped ZnO Thin Films", J. Phys. Chem. C, 122(1), pp.377~385 (2018)
  35. F. -H. Wang, "Effect of substrate temperature on transparent conducting Al and F co-doped ZnO thin films prepared by rf magnetron sputtering", Appl. Surf. Sci, 370, pp.83~91 (2016)
  36. A. V. Singh, "Doping mechanism in aluminum doped zinc oxide films", J. Appl. Phys. A, 95(7), pp.3640~3643 (2004)
  37. D. H. Zhang, "Scattering mechanisms of charge carriers in transparent conducting oxide films", Appl. Phys. A, 62, pp.487~492 (1996)
  38. J. -H. Lee, "Transparent conducting ZnO : Al, In and Sn thin films deposited by the sol–gel method", Thin Solid Films, 426(1-2), pp.94~99 (2003)
  39. Q. Shi, "Structural and opto-electric properties of Ga and F codoped ZnO thin films on PC substrates", Vacuum, 94, pp.81~83 (2013)
  40. B. G. Choi, "Electrical, optical and structural properties of transparent and conducting ZnO thin films doped with Al and F by rf magnetron sputter", J. Eur. Ceram, 25(12), pp.2161~2165 (2005)
  41. J. Jia, "Experimental observation on the Fermi level shift in polycrystalline Aldoped ZnO films", J. Appl. Phys, 112(1) (2012)
  42. T. Serin, "Electrical conduction properties of In-doped ZnO thin films", Phys. Scr, 84(6), pp.065703~ (2011)
  43. R. Cao, "Design Principles of p-Type Transparent Conductive Materials", ACS Appl. Mater. Interfaces, 11(28), pp.24837~24849 (2019)
  44. L. Wang, "Study of Electronic Band Structure and Optical Properties Al-F codoped ZnO", Curr. Nanosci, 14(6), pp.520~527 (2018)
  45. F. P. Shabino, "Role of atomic radius and d-states hybridization in the stability of the crystal structure of M2O3(M=Al, Ga, In)oxides", Phys. Rev. B, 90(15), pp.155206~ (2014)
  46. J. H. W. Wit, "Structural aspects and defect chemistry in In2O3", J. Solid State Chem, 20(2), pp.143~148 (1977)
  47. J. Ma, "Theoretical study on group III elements and F codoped ZnO", J. Alloys Compd, 819, pp.153012~ (2020)

관련 논문AI추천

ZnO:Al 투명도전막의 열처리에 따른전기적 및 광학적 특성마대영, 박기철한국전기전자학회 · 전기전자학회논문지2020 · 제24권 제2호DC 마그네트론 스터링법을 이용하여 증착한 Ga, Al, In 첨가 ZnO 박막의 특성박상은, 박세훈, 송풍근, Lue jie한국표면공학회 · 한국표면공학회지2008 · 제41권 제4호라디오파 마그네트론 스퍼터링으로 성장한 질소와 알루미늄 도핑된 ZnO 박막의 특성조선욱, 조신호한국표면공학회 · 한국표면공학회지2008 · 제41권 제4호Sol-gel법에 의한 Al과 F가 첨가된 ZnO 투명전도막의 전기 및 광학적 특성박병옥, 이민재, 이승엽한국결정성장학회 · 한국결정성장학회지2006 · 제16권 제2호ZnO 초박막의 두께 변화에 따른 구조적, 전기적, 광학적 특성 변화 연구강경문, 김민재, 박형호, 이홍섭, Wang Yue한국마이크로전자및패키징학회 · 마이크로전자 및 패키징학회지2019 · 제26권 제2호RF 마그네트론 스퍼터링 방법을 사용해 증착된 Al이 도핑 된 ZnO 박막의 H2/ (Ar + H2) 가스 비율에 따른 특성김좌연, 한정수한국결정성장학회 · 한국결정성장학회지2012 · 제22권 제3호

이 간행물의 다른 논문 (14건)

첨단 반도체 패키징을 위한 미세 피치 Cu Pillar Bump 연구 동향윤정원, 이효원, 노은채pp. 1-10인공지능 반도체 및 패키징 기술 동향정재필, 김희주pp. 11-19Ti3C2Tx MXene 기반 전극 소재의 자가 치유 적용 기술 개발 동향정승부, 최준상, 김종웅pp. 20-34ESG를 위한 반도체 패키지 기술 트렌드서민석pp. 35-39인터포저를 이용한 Stacked PCB의 휨 및 솔더 조인트 강도 연구김기풍, 좌성훈, 황보유환pp. 40-50
원문 보기