ZnO:Al 투명도전막의 열처리에 따른전기적 및 광학적 특성
Electrical and optical properties of ZnO:Al transparent conductive films with thermal treatments
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초록
고주파 마그네트론 스퍼터링으로～500 nm 두께의 ZnO:Al막을 증착하였다. 증착된 ZnO:Al막을 100 ℃, 200 ℃, 300 ℃ 및400 ℃에서 10시간 동안 열처리하였다. ZnO:Al막의 열처리에 따른 저항률, 캐리어 농도 및 이동도 변화를 측정하였다. XRD,FESEM 결과를 통해 열처리에 따른 ZnO:Al막의 저항률 변화 원인을 조사하였다. ZnO:Al막의 광 투과율을 측정한 후 에너지밴드 갭, Urbach 에너지 및 굴절률을 도출하였다. ZnO:Al막의 전기적 특성 변화를 광특성과 연관지어 설명하였다.
Abstract
ZnO:Al films with about 500 nm thick were prepared by RF magnetron sputtering. The ZnO:Al films were annealedat 100 ℃, 200 ℃, 300 ℃, and 400 ℃ for 10 h, respectively. The resistivity, carrier concentration, and mobility variationof ZnO:Al films with heat treatments were measured. The causes of the resistivity variation of ZnO:Al films with heattreatments were investigated by utilizing the results of x-ray diffraction and field emission scanning electron microscope. The energy band gap, Urbach energy, and refractive index were obtained from the transmittance of ZnO:Al films. The change in electrical properties of the ZnO:Al film was explained in relation to the optical properties.
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