DC 마그네트론 스터링법을 이용하여 증착한 Ga, Al, In 첨가 ZnO 박막의 특성
Characterization of Ga, Al or In Doped ZnO Films Deposited by DC Magnetron Sputtering
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Trivalent ions (Ga, Al, In) doped ZnO films were deposited by DC magnetron sputtering on non-alkali glass substrate at substrate temperature of 300℃. We used the different three types of high density (95%~) ceramic sintered disks (doped with Ga₂O₃ 6.65 wt%, Al₂O₃ 3.0 wt%, In₂O₃ 9.54 wt%). This study examined the effect of different dopants (Ga, Al, In) on the electrical, structural, and optical properties of the films. The lowest resistivity of 5.140-4 Wcm and the highest optical band gap of 3.74 eV were obtained by Ga doped ZnO (GZO) film. All the films had a preferred orientation along the (002) direction, indicating that the growth orientation has a c-axis perpendicular to the substrate surface. The average transmittance of the films was more than 85% in the visible range.
Abstract
Trivalent ions (Ga, Al, In) doped ZnO films were deposited by DC magnetron sputtering on non-alkali glass substrate at substrate temperature of 300℃. We used the different three types of high density (95%~) ceramic sintered disks (doped with Ga₂O₃ 6.65 wt%, Al₂O₃ 3.0 wt%, In₂O₃ 9.54 wt%). This study examined the effect of different dopants (Ga, Al, In) on the electrical, structural, and optical properties of the films. The lowest resistivity of 5.140-4 Wcm and the highest optical band gap of 3.74 eV were obtained by Ga doped ZnO (GZO) film. All the films had a preferred orientation along the (002) direction, indicating that the growth orientation has a c-axis perpendicular to the substrate surface. The average transmittance of the films was more than 85% in the visible range.
참고문헌 (12)
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