증착시간이 변화된 SnO2 박막의 원자 구조적 특성에 관한 연구

Abstract

The result of examining the growth surface of the thin film through x-ray diffraction analysis of the SnO2 thin film with a changed deposition time, it was confirmed that the growth direction of the SnO2 thin film was grown in the direction of (110), (101), (200), (111), and (211) plane to form the SnO2 thin film in a rutile structure, and the growth intensity of the SnO2 thin film changed according to the deposition time. As a result of atomic analysis of the SnO2 thin film through a transmission electron microscope, it was confirmed that the oxygen atom first bonded with the silicon substrate to form a silicon oxide layer and then a tin oxide layer was formed, so the initial growth process of the SnO2 thin film could be interpreted as plasma ion bonding of oxygen gas molecules and tin between the substrate and the interface. As a result of analysis through transmission electron microscope elemental analysis, the atomic weight ratio of tin and oxygen in the SnO2 thin film was changed to 38.95%: 61.05%, 44.55%: 55.45%, 59.60%: 40.40%, 56.91%: 43.09%, and the atomic weight ratio was affected by the deposition time. The electrical resistance values of the SnO2 thin films varied as well, measuring 37.5 Kohm, 294.4 Kohm, 172.5 Kohm, and 18.43 Kohm, while the capacitance values changed to 659.8 nF, 2.634 nF, 1.077 nF, and 1.686 nF. These results indicate that the variation in deposition time has impact on the electrical properties of the SnO2 thin films.