열화학기상증착법을 이용한 Si 기판 위의 SnO2 나노와이어 제작 및 물성평가
Synthesis and characterization of SnO2 nanowires on Si substrates in a thermal chemical vapor deposition process
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Vapor liquid solid 기구에 의한 열화학기상증착법을 이용하여 Si (001) 기판 위에 SnO2 나노와이어를 성장시켰 다. Au 박막 (3 nm)을 성장을 위한 촉매로 사용하여 Si(001) 기판 위에 순수 SnO powder (purity, 99.9 %)를 반응 원료로 대 기압 하 950~1000 o C 온도 범위, 750~800 sccm 아르곤 분위기에서 SnO2 나노와이어를 성장시켰다. X-ray diffraction 분석을 통해 성장한 SnO2 나노와이어가 tetragonal rutile 구조임을 확인하였고, transmission electron microscopy 분석을 통해 단일 나노와이어의 결정 특성을 분석하였다. 또한, 상온 photoluminescence 분석을 통해 나노와이어 샘플로부터 600 nm 부근에 서 나타나는 defect level 천이에 의한 넓은 emission band를 확인함으로써 성장한 나노와이어가 SnO2임을 확인하였다.
Abstract
Single-crystalline SnO2 nanowires were successfully grown on Si(001) substrates via vapor-liquid-solid mechanismin a thermal chemical vapor deposition. Large quantity of SnO2 nanowires were synthesized at temperature ranges of 950~1000oC in Ar atmosphere. It was found that the grown SnO2crystalline by diffraction and transmision electron microscopy measurements. Broad emission located at about 600 nm fromthe grown nanowires was clearly observed in room temperature photoluminescence measurements, indicating that theemission band originated from defect level transition into SnO2 nanowires.Key words SnO2, Nanowire, CVD, VLS, Catalyst, Single crystalline, Tetragonal structure, Photoluminescence, Free exciton,Defect level, Sensors......... ... Si .. .. SnO2 ..... .. . ....
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