Effects of Substrate Temperature on Properties of Sb-doped SnO2 Thin Film
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Antimony-doped tin oxide (ATO) thin films, one type of transparent conductive oxide (TCO) films, were prepared on a SiO2-coated glass substrate with different substrate temperatures by a radio-frequency magnetron sputtering system. Structural, optical, and electrical characteristics of the deposited ATO films were analyzed using X-ray diffraction, scanning electron microscopy, alpha-step, ultravioletvisiblespectrometer, and Hall effect measurement. The substrate temperature during deposition did not affect the basic crystal structure of the films but changed the grain size and film thickness. The optical transmittance of the ATO films deposited at different substrate temperatures was over 70%. The lowest sheet resistance and resistivity were 8.43 × 102 Ω/sq, and 0.3991 ×10-2 Ω·cm, respectively, and the highest carrier concentration and mobility were 2.36 × 1021 cm-3 and 6.627 × 10-2 cm2V-1s-1, respectively, at a substrate temperature of 400 °C.
Abstract
Antimony-doped tin oxide (ATO) thin films, one type of transparent conductive oxide (TCO) films, were prepared on a SiO2-coated glass substrate with different substrate temperatures by a radio-frequency magnetron sputtering system. Structural, optical, and electrical characteristics of the deposited ATO films were analyzed using X-ray diffraction, scanning electron microscopy, alpha-step, ultravioletvisiblespectrometer, and Hall effect measurement. The substrate temperature during deposition did not affect the basic crystal structure of the films but changed the grain size and film thickness. The optical transmittance of the ATO films deposited at different substrate temperatures was over 70%. The lowest sheet resistance and resistivity were 8.43 × 102 Ω/sq, and 0.3991 ×10-2 Ω·cm, respectively, and the highest carrier concentration and mobility were 2.36 × 1021 cm-3 and 6.627 × 10-2 cm2V-1s-1, respectively, at a substrate temperature of 400 °C.
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