Characterization of transparent ATO conducting films prepared by RF magnetron sputtering
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In this study, we synthesized ATO films using RF magnetron sputtering method consisted of SnO₂target added Sb of 6 wt% and investigated the effect of O₂on structural, electrical, and optical properties of ATO films. As a result, in case of O₂/Ar ratio of 0.11, we obtained ATO films exhibit the properties such as the resistivity about 8 × 10-³ [Ω-cm], the transmittance of 85.17 %, and retile structure.
Abstract
In this study, we synthesized ATO films using RF magnetron sputtering method consisted of SnO₂target added Sb of 6 wt% and investigated the effect of O₂on structural, electrical, and optical properties of ATO films. As a result, in case of O₂/Ar ratio of 0.11, we obtained ATO films exhibit the properties such as the resistivity about 8 × 10-³ [Ω-cm], the transmittance of 85.17 %, and retile structure.
참고문헌 (8)
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