Broadband MMIC Amplifiers for Millimeter-wave Applications
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This paper reports Ka-band ultra low-noise amplifiers using HEMTs and Q-band linear power amplifiers using HBTs.Fabricated PHEMT LNAsshowed an average noise figure of 2.2 dB from 31 to 36 GHz with an associated gain of 22.5 dB. At the design frequency of 35 GHz, the noise figure was less than 2 dB. The linear HBT amplifier showed a peak gain of 13.5 dB at 38 GHz and a 3-dB bandwidth of 10 GHz. Under class-A bias conditions, the circuit exhibited P1dBs higher than 15 dBm from 35 to 41.5 GHz and a peak PAE of 32 %at 35 GHz. Two-tone tests showed an IP3 of 30 dBm at 44 GHz and IMD3 ratios better than 20 dBc at 1 dB gain compression point. Amplifier phase noise measurement showed added phase noise of -148 dBc/Hz at 10 KHz away from the carrier at P 1dB. These circuits demonstrate a great potential for the HEMT and HBT MMICs for mm-wave low noise and linear power applications.
Abstract
This paper reports Ka-band ultra low-noise amplifiers using HEMTs and Q-band linear power amplifiers using HBTs.Fabricated PHEMT LNAsshowed an average noise figure of 2.2 dB from 31 to 36 GHz with an associated gain of 22.5 dB. At the design frequency of 35 GHz, the noise figure was less than 2 dB. The linear HBT amplifier showed a peak gain of 13.5 dB at 38 GHz and a 3-dB bandwidth of 10 GHz. Under class-A bias conditions, the circuit exhibited P1dBs higher than 15 dBm from 35 to 41.5 GHz and a peak PAE of 32 %at 35 GHz. Two-tone tests showed an IP3 of 30 dBm at 44 GHz and IMD3 ratios better than 20 dBc at 1 dB gain compression point. Amplifier phase noise measurement showed added phase noise of -148 dBc/Hz at 10 KHz away from the carrier at P 1dB. These circuits demonstrate a great potential for the HEMT and HBT MMICs for mm-wave low noise and linear power applications.