Design of an H-band Frequency Tripler and Buffer Amplifier IC in 250-nm InP HBT Process
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In this paper, we propose the design of an H-band(220-330 GHz) frequency tripler, buffer amplifier IC(Integrated Circuit) using 250-nm InP HBT technologies. H-band frequency tripler is designed by using triple-push technique and is composed of 3-way 120° power divider and coupled line. Simulated result of H-band tripler shows -3 dBm output power while measured result shows between -9 and -6 dBm output power. Spectrum result of H-band tripler is down-converted by H-band harmonic mixer but it shows H-band tripler operates well at H-band. To decrease buffer amplifier chip area, we use cascode method in buffer amplifier design. IC with H-band tripler and buffer shows 5.6 dBm output power and -3.6 dB conversion gain. Finally, to decrease performance degradation due to off-chip transition, we will design on-chip transition connecting waveguide and microstrip.
Abstract
In this paper, we propose the design of an H-band(220-330 GHz) frequency tripler, buffer amplifier IC(Integrated Circuit) using 250-nm InP HBT technologies. H-band frequency tripler is designed by using triple-push technique and is composed of 3-way 120° power divider and coupled line. Simulated result of H-band tripler shows -3 dBm output power while measured result shows between -9 and -6 dBm output power. Spectrum result of H-band tripler is down-converted by H-band harmonic mixer but it shows H-band tripler operates well at H-band. To decrease buffer amplifier chip area, we use cascode method in buffer amplifier design. IC with H-band tripler and buffer shows 5.6 dBm output power and -3.6 dB conversion gain. Finally, to decrease performance degradation due to off-chip transition, we will design on-chip transition connecting waveguide and microstrip.
참고문헌 (7)
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