A 20 W GaN-based Power Amplifier MMIC for X-band Radar Applications
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초록
In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-bandradar applications. It utilizes commercial 0.25 μm GaN-based high electron mobility transistor (HEMT) technologyand delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signalgain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulsewidth of 200 μs and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are 3.5 mm ×2.3 mm, generating the output power density of 2.71 W/mm2. Its power added efficiency (PAE) is 42.6–50.7% inthe frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to beapplied in a variety of X-band radar applications.
Abstract
In this paper, we demonstrated a power amplifier monolithic microwave integrated circuit (MMIC) for X-bandradar applications. It utilizes commercial 0.25 μm GaN-based high electron mobility transistor (HEMT) technologyand delivers more than 20 W of output power. The developed GaN-based power amplifier MMIC has small signalgain of over 22 dB and saturated output power of over 43.3 dBm (21.38 W) in a pulse operation mode with pulsewidth of 200 μs and duty cycle of 4% over the entire band of 9 to 10 GHz. The chip dimensions are 3.5 mm ×2.3 mm, generating the output power density of 2.71 W/mm2. Its power added efficiency (PAE) is 42.6–50.7% inthe frequency bandwidth from 9 to 10 GHz. The developed GaN-based power amplifier MMIC is expected to beapplied in a variety of X-band radar applications.
참고문헌 (18)
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- "APA091030D"[URL]
- "CMPA801B025D"[URL]
- "TGA2624"[URL]
- "CHA8610-99F"[URL]