Self-Cascode Structures Using Optional devices in Standard CMOS Technology
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This paper describes two possible configurations of an asymmetric-VTH self-cascode (SC) structure using optional devices in a 0.18-μm standard CMOS process. Standard CMOS technologies offer optional devices for a range of circuit design solutions, such as zero threshold voltage (ZVT) MOSFETs and thick gate oxide input/output (I/O) MOSFETs. In this paper, ZVT and I/O MOSFETs were implemented in the asymmetric-threshold voltage (VTH) self-cascode (SC) structures. These asymmetric-VTH SC structures with optional devices and a two-stage operational amplifier (OPAMP) using these SC structures were fabricated and evaluated. As a result of single device level evaluation, the SC with ZVT MNOSFET device showed improved output resistance as well as transconductance than the conventional single MOSFETs. From measurements of the fabricated two-stage OPAMP, the OPAMP with ZVT-SC device showed higher DC gain, faster slew rate, and higher unity-gain frequency.
Abstract
This paper describes two possible configurations of an asymmetric-VTH self-cascode (SC) structure using optional devices in a 0.18-μm standard CMOS process. Standard CMOS technologies offer optional devices for a range of circuit design solutions, such as zero threshold voltage (ZVT) MOSFETs and thick gate oxide input/output (I/O) MOSFETs. In this paper, ZVT and I/O MOSFETs were implemented in the asymmetric-threshold voltage (VTH) self-cascode (SC) structures. These asymmetric-VTH SC structures with optional devices and a two-stage operational amplifier (OPAMP) using these SC structures were fabricated and evaluated. As a result of single device level evaluation, the SC with ZVT MNOSFET device showed improved output resistance as well as transconductance than the conventional single MOSFETs. From measurements of the fabricated two-stage OPAMP, the OPAMP with ZVT-SC device showed higher DC gain, faster slew rate, and higher unity-gain frequency.
참고문헌 (13)
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