A Wideband Bi-Directional Gain Amplifier with Asymmetric Cell using Cascade Gain Boosting in 65nm CMOS Process
0
조회
0
다운로드
0
인용
0
참고문헌
키워드
초록
A bidirectional distributed gain amplifier (BDGA) with asymmetric cell combined with a cascade gain boosting structure is presented in this paper. Conventional DA designs generally have the gain limitation because of the additive gain mechanism, whereas the proposed structure can benefit significantly from the multiplicative gain mechanism due to the cascade of two BDGAs. Moreover, the unit gain cells are intentionally designed to be asymmetrical with the common source (CS) configuration at output stages to improve the output power of the circuit. The proposed circuit architecture is fabricated in a standard 65 nm CMOS. The measurement results show the gain of 10.5 dB, and the 3-dB bandwidth from 5.8 - 17.6 GHz. The measured output P1dB is 6.8 dBm along with 9.3 dBm of the saturated output power at 10 GHz. The circuit draws a current of 75 mA from a 1.2 V supply and occupies 1.1 x 0.6 mm2 of chip area.
Abstract
A bidirectional distributed gain amplifier (BDGA) with asymmetric cell combined with a cascade gain boosting structure is presented in this paper. Conventional DA designs generally have the gain limitation because of the additive gain mechanism, whereas the proposed structure can benefit significantly from the multiplicative gain mechanism due to the cascade of two BDGAs. Moreover, the unit gain cells are intentionally designed to be asymmetrical with the common source (CS) configuration at output stages to improve the output power of the circuit. The proposed circuit architecture is fabricated in a standard 65 nm CMOS. The measurement results show the gain of 10.5 dB, and the 3-dB bandwidth from 5.8 - 17.6 GHz. The measured output P1dB is 6.8 dBm along with 9.3 dBm of the saturated output power at 10 GHz. The circuit draws a current of 75 mA from a 1.2 V supply and occupies 1.1 x 0.6 mm2 of chip area.
참고문헌 (9)
- J. S. Herd, "The Evolution to Modern Phased Array Architectures", Proceedings of the IEEE, 104(3), pp.519~529 (2016)
- Alan J. Fenn, "The development of Phased-Array Radar Technology", Lincoln Laboratory Journal, 12(2) (2000)
- P. Schuh, "T", R-module technologies today and future trends, 2010, 1540~1543
- J. M. Yang, "Compact ka-band bi-directional amplifier for low-cost electronic scanning array antenna", IEEE Journal of Solid-State Circuits, 39(10), pp.1716~1719 (2004)
- D. W. Kang, "Single and Four-Element Ka-Band Transmit", Receive Phased-Array Silicon RFICs With 5-bit Amplitude and Phase Control, 2009, pp.57(12), 3534~3543
- J. Kim, "A Switchless, Q-Band Bidirectional Transceiver in 0. 12-um SiGe BiCMOS Technology", IEEE Journal of Solid-State Circuits, 47(2), pp.368~380 (2012)
- D. Kim, "C-band bidirectional amplifier with switchable matching circuits", 2015 IEEE Radio Frequency Integrated Circuits Symposium (RFIC), pp.375~378 (2015)
- W. K. Lo, "Self-phase equalized bidirectional distributed amplifier", Electronics Letters, 43(11), pp.626~627 (2007)
- M. K. Cho, "A Switchless CMOS Bi-Directional Distributed Gain Amplifier With Multi-Octave Bandwidth", IEEE Microwave and Wireless Components Letters, 23(11), pp.611~613 (2013)