Ka-band CMOS Power Amplifier with Self-Biasing-Resistor
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In this paper, a CMOS power amplifier using a Self-Biasing-Resistor transistor for Ka-band is proposed. Generally, when designing a power amplifier with a cascode structure, a structure connecting the source and body of the transistor is used. This changes the inter-cascode voltage depending on the output of the common-source stage, which changes the body voltage of the common-gate stage, ultimately changing the I-V curve. Therefore, by inserting a large resistor between the body and the source, parasitic capacitors are used to split the RF signal swing in the body and compensate for voltage changes. As a result, AM-AM and IMD3 have been improved, and it has a linear output power of 13.1dBm and a linear PAE of 22.6% at a supply voltage of 2.4V.
Abstract
In this paper, a CMOS power amplifier using a Self-Biasing-Resistor transistor for Ka-band is proposed. Generally, when designing a power amplifier with a cascode structure, a structure connecting the source and body of the transistor is used. This changes the inter-cascode voltage depending on the output of the common-source stage, which changes the body voltage of the common-gate stage, ultimately changing the I-V curve. Therefore, by inserting a large resistor between the body and the source, parasitic capacitors are used to split the RF signal swing in the body and compensate for voltage changes. As a result, AM-AM and IMD3 have been improved, and it has a linear output power of 13.1dBm and a linear PAE of 22.6% at a supply voltage of 2.4V.
참고문헌 (22)
- T. Joo, "A WLAN RF CMOS PA with Large-Signal MGTR Method", IEEE Transactions on Microwave Theory and Techniques, 61(3), pp.1272~1279 (2013)
- S. Jang, "Differential 2. 4-GHz CMOS Power Amplifier Using an Asymmetric Differential Inductor to Improve Linearity", Journal of the Korean Institute of Information and Communication Engineering, 23(6), pp.726~732 (2019)
- N. Ryu, "A fully integrated high efficiency RF power amplifier for WLAN application in 40 nm standard CMOS process", IEEE Micowave and Wireless Components Letters, 25(6), pp.382~384 (2015)
- H, "A Fully Integrated Dual-Mode CMOS Power Amplifier With an Autotransformer-Based Parallel Combining Transformer", IEEE Micowave and Wireless Components Letters, 27(9), pp.833~835 (2017)
- T. Joo, "A WLAN RF CMOS PA with adaptive power cells", Proc. IEEE RFIC Symp, pp.345~348 (2013)
- Jeong, Gwanghyeon, "An integrated dual-mode CMOS power amplifier with linearizing body network", IEEE Transactions on Circuits and Systems II: Express Briefs, 64(9), pp.1037~1041 (2016)
- G. Cho, "28-GHz CMOS power amplifier linearized with resistive drain-body connection", IEEE Microw. Wireless Compon. Lett, 30(9), pp.876~879 (2020)
- C. Fager, "A comprehensive analysis of IMD behavior in RF CMOS power amplifiers", IEEE Journal of Solid-State Circuits, 39(1), pp.24~34 (2004)
- Zhang, Yang, "A high-efficiency linear power amplifier for 28GHz mobile communications in 40nm CMOS", 2017 IEEE Radio Frequency Integrated Circuits Symposium(RFIC) (2017), IEEE
- Shakib, Sherif, "A highly efficient and linear power amplifier for 28-GHz 5G phased array radios in 28-nm CMOS", IEEE Journal of Solid-State Circuits, 51(12), pp.3020~3036 (2016)
- L. C. Nunes, "AM", AM and AM, IEEE Transactions on Microwave Theory and Techniques, pp.2014, 62(4)[DOI]
- J. P. Aiko, "A comprehensive analysis of AM-AM and AM-PM conversion in an LDMOS RF power amplifier", IEEE Transactions on Microwave Theory and Techniques, 57(2), pp.262~270 (2009)
- Lee, Seungchan, "A Ka-band phase-compensated variable-gain CMOS low-noise amplifier", IEEE Microwave and Wireless Components Letters, 29(2), pp.131~133 (2019)
- S. Jin, "Enhanced linearity of CMOS power amplifier using adaptive common gate bias control", Proc. MTT-S Int. Microw. Symp. Dig, pp.1~4 (2013)
- H. Song, "Digitally intensive transmitter employing RF pulse width modulation ofr IoT applications", Proc. IEEE RFIC Symp, pp.151~154 (2015)
- B. Park, "Highly linear mm-wave CMOS power amplifier", IEEE Trans. Microwave Theory and Techniques, 64(12), pp.4535~4544 (2016)
- S, Lee, "A 28-GHz CMOS linear power amplifier with low output phase variation over dual power modes", IEEE Microwave and Wireless Components Letters, 29(8), pp.551~553 (2019)
- WANG, Chengzhou, "A capacitance-compensation technique for improved linearity in CMOS class-AB power amplifiers", IEEE journal of solid-state circuits, 39(11), pp.1927~1937 (2004)
- S. Shakib, "2. 7 A wideband 28GHz power amplifier supporting 8×100MHz carrier aggregation for 5G in 40nm CMOS", IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, pp.44~45 (2017)
- W. Lee, "A 28-GHz CMOS power amplifier linearized by dynamic conductance control and body carrier injection", IEEE Microwave and Wireless Components Letters, 31(9), pp.1071~1074 (2021)
- S. N. Ali, "Transformer-based predistortion linearizer for high linearity and high modulation efficiency in mm-Wave 5G CMOS power amplifiers", IEEE Trans. Microw. Theory Techn, 67(7), pp.3074~3087 (2019)
- Jeong, Gwanghyeon, "A highly linear and efficient CMOS power amplifier with cascode–cascade configuration", IEEE Microwave and Wireless Components Letters, 27(6), pp.596~598 (2017)