Analysis of Millimeter-Wave Power Amplifier Using Cascode Structure
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This paper illustrates a power amplifier design methodology used in the millimeter-wave and analyzes design issues at millimeter-wave band. The designed millimeter-wave band power amplifier is implemented in 3 stages cascade. The power amplifier consists of a drive stage using cascode and power stage to which neutralization technique is applied. we analyze how to verify the parasitic effects in the millimeter-wave band on the cascode structure of the drive stage through pre-layout and post layout simulation. The power amplifier of the millimeter-wave band was designed using the Samsung 28nm process. The simulation result of the designed power amplifier shows the saturation output power is 7 dBm and the PAE is 6.5%. In the simulation, S21 is 16.8 dB. Designed with 1 V supply, the power amplifier consumes 62 mW of DC power.
Abstract
This paper illustrates a power amplifier design methodology used in the millimeter-wave and analyzes design issues at millimeter-wave band. The designed millimeter-wave band power amplifier is implemented in 3 stages cascade. The power amplifier consists of a drive stage using cascode and power stage to which neutralization technique is applied. we analyze how to verify the parasitic effects in the millimeter-wave band on the cascode structure of the drive stage through pre-layout and post layout simulation. The power amplifier of the millimeter-wave band was designed using the Samsung 28nm process. The simulation result of the designed power amplifier shows the saturation output power is 7 dBm and the PAE is 6.5%. In the simulation, S21 is 16.8 dB. Designed with 1 V supply, the power amplifier consumes 62 mW of DC power.
참고문헌 (9)
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