A 28-GHz CMOS Power Amplifier with Ribbon Cell
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In this paper, we present a ribbon cell CMOS power amplifier in which the structure of the power cell is like a ribbon. As the frequency increases, the output impedance decreases due to parasitic capacitors, so an interstage inductor is used. The interstage inductor used in previous research has the problem of increasing the size of the chip. Ribbon cells use larger interstage inductors through mutual inductance. Therefore, a metal smaller than the desired inductor metal size can be used. This allows the chip size to be designed to be small. It also improves AM-PM distortion and IMD3. It operates at 28 GHz with a 2.4 V supply voltage and achieves IMD3 of -40dBc at 10 dBm output power and -30dBc at 12.3 dBm output power and PAE of 19% and 25% respectively. It has a saturated output power of 18.4dBm and achieves a gain of 11.6dB at a P1dB of 16.4dBm.
Abstract
In this paper, we present a ribbon cell CMOS power amplifier in which the structure of the power cell is like a ribbon. As the frequency increases, the output impedance decreases due to parasitic capacitors, so an interstage inductor is used. The interstage inductor used in previous research has the problem of increasing the size of the chip. Ribbon cells use larger interstage inductors through mutual inductance. Therefore, a metal smaller than the desired inductor metal size can be used. This allows the chip size to be designed to be small. It also improves AM-PM distortion and IMD3. It operates at 28 GHz with a 2.4 V supply voltage and achieves IMD3 of -40dBc at 10 dBm output power and -30dBc at 12.3 dBm output power and PAE of 19% and 25% respectively. It has a saturated output power of 18.4dBm and achieves a gain of 11.6dB at a P1dB of 16.4dBm.
참고문헌 (21)
- T. Joo, "A WLAN RF CMOS PA with Large-Signal MGTR Method", IEEE Transactions on Microwave Theory and Techniques, 61(3), pp.1272~1279 (2013)
- S. Jang, "Differential 2. 4-GHz CMOS Power Amplifier Using an Asymmetric Differential Inductor to Improve Linearity", Journal of the Korean Institute of Information and Communication Engineering, 23(6), pp.726~732 (2019)
- N. Ryu, "A fully integrated high efficiency RF power amplifier for WLAN application in 40 nm standard CMOS process", IEEE Micowave and Wireless Components Letters, 25(6), pp.382~384 (2015)
- H, Ahn, "A Fully Integrated Dual-Mode CMOS Power Amplifier With an Autotransformer-Based Parallel Combining Transformer", IEEE Micowave and Wireless Components Letters, 27(9), pp.833~835 (2017)
- T. Joo, "A WLAN RF CMOS PA with adaptive power cells", Proc. IEEE RFIC Symp, pp.345~348 (2013)
- C. Fager, "A comprehensive analysis of IMD behavior in RF CMOS power amplifiers", IEEE Journal of Solid-State Circuits, 39(1), pp.24~34 (2004)
- Oh, Juntaek, "A 77-GHz CMOS power amplifier with a parallel power combiner based on transmission-line transformer", IEEE Transactions on Microwave Theory and Techniques, 61(7), pp.2662~2669 (2013)
- Park, Jinseok, "Design of a Ka-band cascode power amplifier linearized with cold-FET interstage matching network", IEEE Transactions on Microwave Theory and Techniques, 69(2), pp.1429~1438 (2020)
- L. C. Nunes, "AM", AM and AM, IEEE Transactions on Microwave Theory and Techniques, pp.2014, 62(4)[DOI]
- J. P. Aiko, "A comprehensive analysis of AM-AM and AM-PM conversion in an LDMOS RF power amplifier", IEEE Transactions on Microwave Theory and Techniques, 57(2), pp.262~270 (2009)
- Lee, Seungchan, "A Ka-band phase-compensated variable-gain CMOS low-noise amplifier", IEEE Microwave and Wireless Components Letters, 29(2), pp.131~133 (2019)
- S. Jin, "Enhanced linearity of CMOS power amplifier using adaptive common gate bias control", Proc. MTT-S Int. Microw. Symp. Dig, pp.1~4 (2013)
- H. Song, "Digitally intensive transmitter employing RF pulse width modulation ofr IoT applications", Proc. IEEE RFIC Symp, pp.151~154 (2015)
- B. Park, "Highly linear mm-wave CMOS power amplifier", IEEE Trans. Microwave Theory and Techniques, 64(12), pp.4535~4544 (2016)
- S, Lee, "A 28-GHz CMOS linear power amplifier with low output phase variation over dual power modes", IEEE Microwave and Wireless Components Letters, 29(8), pp.551~553 (2019)
- WANG, Chengzhou, "A capacitance-compensation technique for improved linearity in CMOS class-AB power amplifiers", IEEE journal of solid-state circuits, 39(11), pp.1927~1937 (2004)
- S. Shakib, "2. 7 A wideband 28GHz power amplifier supporting 8×100MHz carrier aggregation for 5G in 40nm CMOS", IEEE Int. Solid-State Circuits Conf. (ISSCC) Dig. Tech. Papers, pp.44~45 (2017)
- W. Lee, "A 28-GHz CMOS power amplifier linearized by dynamic conductance control and body carrier injection", IEEE Microwave and Wireless Components Letters, 31(9), pp.1071~1074 (2021)
- S. N. Ali, "Transformer-based predistortion linearizer for high linearity and high modulation efficiency in mm-Wave 5G CMOS power amplifiers", IEEE Trans. Microw. Theory Techn, 67(7), pp.3074~3087 (2019)
- Jeong, Gwanghyeon, "A highly linear and efficient CMOS power amplifier with cascode–cascade configuration", IEEE Microwave and Wireless Components Letters, 27(6), pp.596~598 (2017)
- G. Cho, "28-GHz CMOS power amplifier linearized with resistive drain-body connection", IEEE Microw. Wireless Compon. Lett, 30(9), pp.876~879 (2020)