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Fully Integrated Triple-Mode Ka-Band Power Amplifier with Vertical-Horizontal Combined Transformer for 5G NR Applications

안현진|김근태|오규택|이옥구
반도체설계교육센터 (IC DESIGN EDUCATION CENTER)|2022.10|IDEC Journal of Integrated Circuits and Systems|제8권 제4호|pp. 39-44|DOI 10.23075/jicas.2022.8.4.007

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키워드

5GCMOSHigh EfficiencyKa-band65-nmPower amplifier (PA)Power combinerTriple-mode control

초록

This paper presents a fully integrated triple-mode Ka-band power amplifier with a vertical-horizontal combined transformer for 5G NR applications, in 65 nm bulk CMOS process. With discrete power control using the proposed vertical-horizontal combined transformer, the triple-mode PA achieves enhanced efficiency performance in the power back-off region. The fully integrated triple-mode PA achieves 18.4-, 21.9-, and 23.5-dBm saturated output powers with 27.2, 34.9, and 41.5% peak PAEs in low power (LP), middle power (MP), and high power (HP) modes, respectively. The triple-mode PA can reduce the current consumption in LP the and MP modes.

Abstract

This paper presents a fully integrated triple-mode Ka-band power amplifier with a vertical-horizontal combined transformer for 5G NR applications, in 65 nm bulk CMOS process. With discrete power control using the proposed vertical-horizontal combined transformer, the triple-mode PA achieves enhanced efficiency performance in the power back-off region. The fully integrated triple-mode PA achieves 18.4-, 21.9-, and 23.5-dBm saturated output powers with 27.2, 34.9, and 41.5% peak PAEs in low power (LP), middle power (MP), and high power (HP) modes, respectively. The triple-mode PA can reduce the current consumption in LP the and MP modes.

참고문헌 (26)

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