가스 센서용 ZnO, SnO2 박막의 이방성 식각을 위한 mask 재료의 식각 선택도 조사
Etch selectivities of mask materials for anisotropic dry etching of gas sensing ZnO and SnO2 films
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초록
고이온밀도 플라즈마 식각에 의한 고종횡비, 고이방성을 갖는 ZnO, SnO2 나노 구조 가스 감응층 형성을 위하여mask 재료들과의 식각 선택도를 조사하였다. 25BCl3/10Ar ICP 플라즈마에서는 ZnO와 Ni 간 5.1~6.1 범위의 식각 선택도가확보된 반면에 Al의 경우 효율적인 식각 선택도를 확보할 수 없었다. 25CF4/10Ar ICP 플라즈마에서는 ZnO와 Ni 간에 7~17 범위의 높은 식각 선택도를 얻을 수 있었다. SnO2는 SnFx 식각 생성물의 높은 휘발성에 기인하여 Ni에 비해 매우 높은식각 속도를 나타내었고, 최고치 약 67의 매우 높은 식각 선택도를 확보하였다.
Abstract
Etch selectivities of mask materials to ZnO and SnO2 films were studied in BCl3/Ar and CF4/Ar inductively coupled plasmas for fabrication of nanostructure-based gas sensing layer with high aspect ratios. In 25BCl3/10Ar ICP discharges, selectivities of 5.1~6.1 were obtained for ZnO over Ni while no practical selectivity was obtained for ZnO over Al. High selectivities of 7~17 for ZnO over Ni were produced in 25CF4/10Ar mixtures. SnO2 showed much higher etch rates than Ni and a maximum selectivity of 67 was observed for SnO2 over Ni.
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