ZnO 박막의 fluorine-계 유도결합 플라즈마 식각
Fluorine-based inductively coupled plasma etching of ZnO film
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CF4/Ar 및 SF6/Ar 유도결합 플라즈마을 이용하여 ZnO 박막의 고이온밀도 플라즈마 식각을 수행하였다. 10CF4/5Ar, 10SF6/5Ar 유도결합 플라즈마에서 최고 ~1950 Å/min과 ~1400 Å/min의 식각 속도를 확보하였다. 대부분의 조건 하에서식각된 ZnO 표면은 식각 전보다 더 낮은 표면조도 값들을 나타내었다. 10CF4/5Ar 유도결합 플라즈마에서 Ni mask는 ZnO 에 대해 최고 11의 높은 식각 선택도를 나타낸 반면에 Al은 이보다 낮은 1.6~4.7 범위의 식각선택도를 나타내었다.
Abstract
High density plasma etching of ZnO film was performed in CF4/Ar and SF6/Ar inductively coupled plasmas. Maximum etch rates of ~1950 Å/min and ~1400 Å/min were obtained for 10CF4/5Ar and 10SF6/5Ar ICP discharges,respectively. The etched ZnO surfaces showed better RMS roughness values than the unetched control sample under most of the conditions examined. In the 10CF4/5Ar ICP discharges, very high etch selectivities were obtained for ZnO over Ni (max. 11) while Al showed etch selectivities in the range of 1.6~4.7 to ZnO.
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