유도 결합 플라즈마를 이용한 TaN 박막의 건식 식각 특성 연구
The study of the etch characteristics of the TaN thin film using an inductively coupled plasma
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In this study, the plasma etching of the TaN thin film with O2/BCl3/Ar gas chemistries was investigated. The equipment for the etching was an inductively coupled plasma (ICP) system. The etch rate of the TaN thin film and the selectivity of TaN to SiO2 and PR was studied as a function of the process parameters, including the amount of O2 added, an RF power, a DC-bias voltage and the process pressure. When the gas mixing ratio was O2(3 sccm)/BCl3(6 sccm)/Ar(14 sccm), with the other conditions fixed, the highest etch rate was obtained. As the RF power and the dc-bias voltage were increased, the etch rate of the TaN thin film was increased. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical states of the surface of the TaN thin film.
Abstract
In this study, the plasma etching of the TaN thin film with O2/BCl3/Ar gas chemistries was investigated. The equipment for the etching was an inductively coupled plasma (ICP) system. The etch rate of the TaN thin film and the selectivity of TaN to SiO2 and PR was studied as a function of the process parameters, including the amount of O2 added, an RF power, a DC-bias voltage and the process pressure. When the gas mixing ratio was O2(3 sccm)/BCl3(6 sccm)/Ar(14 sccm), with the other conditions fixed, the highest etch rate was obtained. As the RF power and the dc-bias voltage were increased, the etch rate of the TaN thin film was increased. X-ray photoelectron spectroscopy (XPS) was used to investigate the chemical states of the surface of the TaN thin film.
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