Anisotropic pattern transfer in SnO2 thin films for the fabrication of nanostructure-based gas sensors
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It is important to develop an anisotropic etch process for the fabrication of highly-aligned nanostructure-based SnO2 gas sensors by a top-down approach. In this study, anisotropic pattern transfer was performed into SnO2 films in BCl3/Ar and CF4/ Ar inductively coupled plasma discharges. Both chemistries produced practical and controllable etch rates of SnO2, with maximum etch rates ~1850 Å/minute for BCl3/Ar and ~1400 Å/minute for CF4/Ar mixtures were obtained. Etch selectivities in the range of 1-5 were obtained for SnO2 over an Al mask layer in the CF4/Ar mixtures. The etched SnO2 films showed smooth surface morphologies and a vertical sidewall profile was acquired. The BCl3/Ar and CF4/Ar ICP etching was found to be very applicable to the fabrication of one-dimensional nanostructure-based SnO2 gas sensors.
Abstract
It is important to develop an anisotropic etch process for the fabrication of highly-aligned nanostructure-based SnO2 gas sensors by a top-down approach. In this study, anisotropic pattern transfer was performed into SnO2 films in BCl3/Ar and CF4/ Ar inductively coupled plasma discharges. Both chemistries produced practical and controllable etch rates of SnO2, with maximum etch rates ~1850 Å/minute for BCl3/Ar and ~1400 Å/minute for CF4/Ar mixtures were obtained. Etch selectivities in the range of 1-5 were obtained for SnO2 over an Al mask layer in the CF4/Ar mixtures. The etched SnO2 films showed smooth surface morphologies and a vertical sidewall profile was acquired. The BCl3/Ar and CF4/Ar ICP etching was found to be very applicable to the fabrication of one-dimensional nanostructure-based SnO2 gas sensors.
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