Inductively Coupled Plasma를 이용한 SnO 박막의 식각 특성 연구
Study of Dry Etching of SnO thin films using a Inductively Coupled Plasma
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The dry etching characteristics of SnO thin films were investigated using inductively coupled plasma (ICP) in Ar, CF4, Cl2 chemistries. the SnO thin films were deposited by reactive rf magnetron sputtering with Sn metal target. In order to study the etching rates of SnO, the processing factors of processing pressure, source power, bias power, and etching gas were controlled. The etching behavior of SnO films under various conditions was obtained and discussed by comparing to that of SiO2 films. In our results, the etch rate of SnO film was obtained as 94nm/min. The etch rates were mainly affected by physical etching and the contribution of chemical etching to SnO films appeared relatively week.
Abstract
The dry etching characteristics of SnO thin films were investigated using inductively coupled plasma (ICP) in Ar, CF4, Cl2 chemistries. the SnO thin films were deposited by reactive rf magnetron sputtering with Sn metal target. In order to study the etching rates of SnO, the processing factors of processing pressure, source power, bias power, and etching gas were controlled. The etching behavior of SnO films under various conditions was obtained and discussed by comparing to that of SiO2 films. In our results, the etch rate of SnO film was obtained as 94nm/min. The etch rates were mainly affected by physical etching and the contribution of chemical etching to SnO films appeared relatively week.
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