Current Modeling for Accumulation Mode GaN Schottky Barrier MOSFET for Integrated UV Sensors
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초록
The drain current of the SB MOSFET was analytically modeled by an equation composed of thermionic emission and tunneling with consideration of the image force lowering. The depletion region electron concentration was used to model the channel electron con-centration for the tunneling current. The Schottky barrier width is dependent on the channel electron concentration. The drain currentis changed by the gate oxide thickness and Schottky barrier height, but it is hardly changed by the doping concentration. For a GaN SB MOSFET with ITO source and drain electrodes, the calculated threshold voltage was 3.5 V which was similar to the measured value of 3.75 V and the calculated drain current was 1.2 times higher than the measured.
Abstract
The drain current of the SB MOSFET was analytically modeled by an equation composed of thermionic emission and tunneling with consideration of the image force lowering. The depletion region electron concentration was used to model the channel electron con-centration for the tunneling current. The Schottky barrier width is dependent on the channel electron concentration. The drain currentis changed by the gate oxide thickness and Schottky barrier height, but it is hardly changed by the doping concentration. For a GaN SB MOSFET with ITO source and drain electrodes, the calculated threshold voltage was 3.5 V which was similar to the measured value of 3.75 V and the calculated drain current was 1.2 times higher than the measured.
참고문헌 (13)
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