Trap-related Electrical Properties of GaN MOSFETs Through TCAD Simulation
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Three different structures of GaN MOSFETs with trap distributions, trap levels, and densities were simulated, and its results were ana- lyzed. Two of them are Schottky barrier MOSFETs(SB-MOSFETs): one with a p-type GaN body while the other is in the accumulation mode MOSFET with an undoped GaN body and regrown source/drain. The trap levels, distributions and densities were considered based on the measured or calculated properties. For the SB-MOSFET, the interface trap distribution affected the threshold voltage sig- nificantly, but had a relatively small influence on the subthreshold swing, while the bulk trap distribution affects the subthreshold swing more.
Abstract
Three different structures of GaN MOSFETs with trap distributions, trap levels, and densities were simulated, and its results were ana- lyzed. Two of them are Schottky barrier MOSFETs(SB-MOSFETs): one with a p-type GaN body while the other is in the accumulation mode MOSFET with an undoped GaN body and regrown source/drain. The trap levels, distributions and densities were considered based on the measured or calculated properties. For the SB-MOSFET, the interface trap distribution affected the threshold voltage sig- nificantly, but had a relatively small influence on the subthreshold swing, while the bulk trap distribution affects the subthreshold swing more.
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