GaN Schottky Barrier MOSFET의 출력 전류에 대한 계면 트랩의 영향
Interface Trap Effects on the Output Characteristics of GaN Schottky Barrier MOSFET
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초록
We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the Nit distribution using TCAD simulation. As interface trap number density (Nit) increased, the threshold voltageincreased while the drain current density decreased. Under Nit=5.0×1010 cm-2 condition, the threshold voltage was 3.2 V for VDS=1 V,and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the Nit distribution type, there wasan increase in the subthreshold swing (SS) following an increase in Nit. Under U-shaped Nit distribution, it was confirmed that the SSvaried depending on the gate voltage. The interface fixed charge (Qf) caused an shift in the threshold voltage and increased the off-statecurrent collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectroniccircuit provided the surface state is significantly reduced.
Abstract
We analyzed the effects of the interface trap on the output characteristics of an inversion mode n-channel GaN Schottky barrier (SB)-MOSFET based on the Nit distribution using TCAD simulation. As interface trap number density (Nit) increased, the threshold voltageincreased while the drain current density decreased. Under Nit=5.0×1010 cm-2 condition, the threshold voltage was 3.2 V for VDS=1 V,and the drain current density reduced to 2.4 mA/mm relative to the non-trap condition. Regardless of the Nit distribution type, there wasan increase in the subthreshold swing (SS) following an increase in Nit. Under U-shaped Nit distribution, it was confirmed that the SSvaried depending on the gate voltage. The interface fixed charge (Qf) caused an shift in the threshold voltage and increased the off-statecurrent collectively with the surface trap. In summary, GaN SB-MOSFET can be a building block for high power UV optoelectroniccircuit provided the surface state is significantly reduced.
참고문헌 (24)
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