In-situ 도핑된 M/NEMS용 다결정 3C-SiC 박막의 특성
Characteristics of in-situ doped polycrystalline 3C-SiC thin films for M/NEMS applications
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This paper describes the electrical properties of poly (polycrystalline) 3C-SiC thin films with different nitrogen doping concentrations. In-situ doped poly 3C-SiC thin films were deposited by APCVD at 1200 oC using HMDS (hexamethyildisilane: Si2(CH3)6)) as Si and C precursor, and 0 ~ 100 sccm N2 as the dopant source gas. The peak of SiC is appeared in poly 3C-SiC thin films grown on SiO2/Si substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of poly 3C-SiC thin films decreased from 8.35 • cm with N2 of 0 sccm to 0.014 • cm with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from 3.0819 ´ 1017 to 2.2994 ´ 1019 cm3 and their electronic mobilities increased from 2.433 to 29.299 cm2/V • S, respectively.
Abstract
This paper describes the electrical properties of poly (polycrystalline) 3C-SiC thin films with different nitrogen doping concentrations. In-situ doped poly 3C-SiC thin films were deposited by APCVD at 1200 oC using HMDS (hexamethyildisilane: Si2(CH3)6)) as Si and C precursor, and 0 ~ 100 sccm N2 as the dopant source gas. The peak of SiC is appeared in poly 3C-SiC thin films grown on SiO2/Si substrates in XRD(X-ray diffraction) and FT-IR(Fourier transform infrared spectroscopy) analyses. The resistivity of poly 3C-SiC thin films decreased from 8.35 • cm with N2 of 0 sccm to 0.014 • cm with 100 sccm. The carrier concentration of poly 3C-SiC films increased with doping from 3.0819 ´ 1017 to 2.2994 ´ 1019 cm3 and their electronic mobilities increased from 2.433 to 29.299 cm2/V • S, respectively.
참고문헌 (11)
- G. S. Chung, "Characteristics of polycrystalline 3C-SiC thin films grown for micro", nano electrome-chanical systems by using single-precursor hexamethyldisilane, 2007, pp.51, 1389~1394
- P. M. Sarro, "Silicon carbide as a new MEMS technology", Sensors & Actuators A, 82, pp.210~218 (2000)
- Y. T. Yang, "Monocrystalline silicon carbide nanoelectromechanical systems", Appl. Phys. Lett, 78, pp.165~167 (2001)
- Mo Li, "Ultra-sensitive NEMS-based cantilevers for sensing, scanned probe and very high-frequency applications", Na- ture Nanotech, 2, pp.114~120 (2007)
- Z. Jingchun, "Electrical, mechanical and metal contact properties of polycrystalline 3C-SiC films for MEMS in harsh environments", Surface & Coatings Tech, 201, pp.8893~8898 (2007)
- G. S. Chung, "Heteroepitaxial growth of single 3C-SiC thin-films on Si (100) substrates using a single-source precursor of hexamethyldisilane by APCVD", Bulletin of the Korean Chemical Soc, 28, pp.533~537 (2007)
- K. Teker, "Selective epitaxial growth of 3C-SiC on patterned Si using hexamethydisilane by APCVD", J. of Cryst. Growth, 257, pp.245~254 (2003)
- R. J. Jwanowski, "XPS and XRD study of crystalline 3C-SiC grown by sublimation", J. Alloys & Compounds, 286, pp.143~147 (1999)
- B. J. Wijesundara, "Nitrogen doping of polycrystalline 3C-SiC films grown using 1, 3-disilabutane in a conventional LPCVD reactor", J. of Crystal Growth, 259, pp.18~25 (2003)
- Z. Jingchun, "Electrical characterization of n-type polycrystalline 3C-SiC carbide thin films deposited by 1, 3-dislabutane", J. the Electrochem. Soc, 153, pp.G548~G551 (2006)
- G. S. Chung, "Characteristics of polycrystalline 3C-SiC thin films grown on AlN buffer layer for M", NEMS applications, 2007, pp.6, 457~461