CVD에 의한 M/NEMS용 다결정 3C-SiC 박막 성장
Growth of polycrystalline 3C-SiC thin films for M/NEMS applications by CVD
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Abstract
This paper presents the growth conditions and characteristics of polycrystalline 3C-SiC (silicon carbide) thin films forM/NEMS applications related to harsh environments. The growth of the 3C-SiC thin film on the oxided Si wafers wascaried out by APCVD using HMDS (hexamethyildisilane: Si2(CH3)6) precursor. Each samples were analyzed by XRD(X-ray difraction), FT-IR (fourier transformation infrared spectroscopy), RHEED (reflection high energy electrondifraction), GDS (glow discharge spectrometer), XPS (X-ray photoelectron spectroscopy), SEM (scanning electronmicroscope) and TEM (tunneling electro microscope). Moreover, the electrical properties of the grown 3C-SiC thin filmwere evaluated by Hall effect. From these results, the grown 3C-SiC thin film is very good crystaline quality, surfacelike miror and low defect. Therefore, the 3C-SiC thin film is suitable for extreme environment, Bio and RF M/NEMSapplications in conjunction with Si fabrication technology.
참고문헌 (5)
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