3C-SiC 버퍼층위에 증착된 M/NEMS용 다결정 AlN 박막의 특성
Characteristics of polycrystalline AlN thin films deposited on 3C-SiC buffer layers for M/NEMS applications
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Abstract
Aluminum nitride (AlN) thin films were deposited on Si substrates by using polycrystalline (poly) 3C-SiC buffer layers,in which the AlN film was grown by pulsed reactive magnetron sputtering. Characteristics of grown AlN films wereAlN thin films was observed by FE-SEM. X-ray diffraction patern proved that the grown AlN film on 3C-SiC layershad highly (002) orientation with low value of FWHM (Θ=1.3o) in the rocking curve around (002) reflections. Theseresults were shown that almost free residual stress existed in the grown AlN film on 3C-SiC bufer layers from the infraredabsorbance spectrum. Therefore, the presented results showed that AlN thin films grown on 3C-SiC buffer layers can beused for various piezoelectric fields and M/NEMS applications.
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