도핑농도에 따른 다결정 3C-SiC 마이크로 공진기의 특성
Characteristics of poly 3C-SiC micro resonators with doping concentrations
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This paper describes the characteristics of poly 3C-SiC micro resonators with 3×1017~1×1019cm-3 doping concentrations. The 1.2 μm thick cantilever and the 0.4 μm thick doubly clamped beam resonators with different lengths were fabricated using poly 3C-SiC thin films. The characteristics of poly 3C-SiC micro resonators were evaluated by quartz and a laser vibrometer in vacuum at room temperature. The resonant frequencies of micro resonators decreased with doping concentrations owing to reduction in the Young's modulus of poly 3C-SiC thin films. It was confirmed that the resonant frequencies of poly 3C-SiC resonators are controllable by doping concentrations. Therefore, poly 3C-SiC resonators could be applied to MEMS devices and bio/chemical sensor applications.
Abstract
This paper describes the characteristics of poly 3C-SiC micro resonators with 3×1017~1×1019cm-3 doping concentrations. The 1.2 μm thick cantilever and the 0.4 μm thick doubly clamped beam resonators with different lengths were fabricated using poly 3C-SiC thin films. The characteristics of poly 3C-SiC micro resonators were evaluated by quartz and a laser vibrometer in vacuum at room temperature. The resonant frequencies of micro resonators decreased with doping concentrations owing to reduction in the Young's modulus of poly 3C-SiC thin films. It was confirmed that the resonant frequencies of poly 3C-SiC resonators are controllable by doping concentrations. Therefore, poly 3C-SiC resonators could be applied to MEMS devices and bio/chemical sensor applications.
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