AlN 버퍼층위에 성장된 M/NEMS용 다결정 3C-SiC 박막의 특성

Abstract

This paper describes the characteristics of poly (polycrystalline) 3C-SiC grown on SiO2 and AlN substrates, respectively.The crystalinity and the bonding structure of poly 3C-SiC grown on each substrate were investigated according to variouswidth half maximum) of XRD and FT-IR by increasing the growth temperature. The minimum growth temperature ofpoly 3C-SiC was 1100oC. The surface chemical composition and the electron mobility of poly 3C-SiC grown on eachsubstrate were investigated by XPS and Hall Efect, respectively. The chemical compositions of surface of poly 3C-SiCfilms grown on SiO2 and AlN were not diferent. However, their electron mobilities were 7.65 cm2/V.s and 14.8 cm2/V.s,respectively. Therefore, since the electron mobility of poly 3C-SiC films grown on AlN bufer layer was two times higherthan that of 3C-SiC/SiO2, a AlN film is a suitable material, as bufer layer, for the growth of poly 3C-SiC thin filmswith excellent properties for M/NEMS applications.