고감도 적외선 이미지 센서 적용을 위한 금속-유전체 복합 박막의 광전자 특성
Optoelectronic properties of the Metal-dielectric complex thin films for applying high sensitivity IR image sensors
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초록
고감도 적외선 이미지 센서에 적용이 가능한 우수한 TCR(temperature coefficient of resistance) 값을 갖고 적외선파장영역에서 흡수 특성을 갖는 막 형성을 위해, 본 연구에서는 Silica와 Titanium 분말을 혼합비율을 달리하여 준비한 후열 기상 증착기를 이용하여 상온에서 게르마늄과 유리 기판 위에 각각 (SiO2)x-(Ti)y 막을 제작하였다. 챔버 내에 위치한 혼합분말이 담겨진 텅스텐 보트와 기판 간의 거리는 15.5 cm이며, 사용된 SiO2와 Ti 분말의 혼합비율 x : y는 각각 90 : 10,80 : 20, 70 : 30, 60 : 40이다. (SiO2)x-(Ti)y 막의 전기적 저항은 273~333 K 영역에서 온도 변화에 따라 측정하였으며, TCR 값은 측정된 막의 저항 값으로부터 계산되었다. 다양한 혼합비율 조건 하에서 형성된 (SiO2)x-(Ti)y 막은 수 kΩ~수백 kΩ의 저항특성을 보였으며, 이러한 막의 TCR은 −1.4~−2.6 %K−1의 다양한 값을 나타내었다.
Abstract
High sensitivity IR image sensors require materials characteristics with temperature coefficient of resistance (TCR)and IR range absorption. In this study, the metal-dielectric thermo sensitive films (MDTF) based on (SiO2)x-(Ti)y composition were deposited on substrates of germanium and glass by thermal evaporator. The SiO2 : Ti mixture was made from the ratio of 9 : 1, 8 : 2, 7 : 3, 6 : 4, respectively. (SiO2)x-(Ti)y mixture powder was loaded on tungsten boat in evaporator and was 15.5 cm from the substrate. Resistance of (SiO2)x-(Ti)y in the range of 273~333 K were measured as a function of temperature. Temperature coefficient of resistance (TCR) was calculated by the resistance variation. Under the various mixture ratios condition, it is possible to obtain SiO2-Ti layers with resistance from units kilo-ohm to hundreds kilo-ohm. Finally, our results showed that Temperature coefficient of resistance (TCR) of these films varies from −1.4 to −2.6 %K−1.
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