NiO Films Formed at Room Temperature for Microbolometer
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Nickel oxide films using RF sputter was formed on the SiO2/Si substrate at the room temperature controlled with water circulation system. The feasibility of nickel oxide film as a bolometric material was demonstrated. GIXRD spectrum on NiO(111), NiO(200), and NiO(220) orientation expected as the main peaks were appeared in the grown nickel oxide films. The typical resistivity acquired at the RF power of 100W was about 34.25 Ω cm. And it was reduced to 18.65 Ω cm according to the increase of the RF power to 400W. The TCR of fabricated micro-bolometer with the resistivity of 34.25 Ω cm was -2.01 %/oC. The characteristics of fabricated nickel oxide film and micro-bolometer were analyzed with XRD pattern, resistivity, TCR, and SEM images.
Abstract
Nickel oxide films using RF sputter was formed on the SiO2/Si substrate at the room temperature controlled with water circulation system. The feasibility of nickel oxide film as a bolometric material was demonstrated. GIXRD spectrum on NiO(111), NiO(200), and NiO(220) orientation expected as the main peaks were appeared in the grown nickel oxide films. The typical resistivity acquired at the RF power of 100W was about 34.25 Ω cm. And it was reduced to 18.65 Ω cm according to the increase of the RF power to 400W. The TCR of fabricated micro-bolometer with the resistivity of 34.25 Ω cm was -2.01 %/oC. The characteristics of fabricated nickel oxide film and micro-bolometer were analyzed with XRD pattern, resistivity, TCR, and SEM images.
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