GaN epitaxy 층의 식각특성에 미치는 공정변수의 영향
Parametric study of inductively coupled plasma etching of GaN epitaxy layer
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초록
플라즈마 조성, ICP source power, rf chuck power 등의 공정변수가 GaN epitaxy층의 식각특성에 미치는 영향을조사하였다. GaFx 화합물 보다 더 높은 휘발성을 가지는 GaClx 식각 생성물 형성이 가능한 Cl2/Ar 플라즈마가 SF6/Ar 플라즈마보다 더 높은 식각속도를 나타내었다. 또한, Cl2/Ar 플라즈마에서 Ar 비중이 증가함에 따라 물리적 식각 기구 활성화로인해 식각 이방성이 향상됨을 확인하였다. 두 가지 플라즈마 조성 모두에서 ICP source power와 rf chuck power가 증가함에따라 식각속도가 지속적으로 증가함을 확인하였고, 13Cl2/2Ar, 750W ICP power, 400 W rf chuck power, 10 mTorr 조건에서최고 251.9 nm/min의 식각속도를 확보하였다.
Abstract
The effect of process parameters such as plasma composition, ICP (Inductively Coupled Plasma) source power and rf chuck power on the etch characteristics of GaN epitaxy layer was studied. Cl2/Ar ICP discharges showed higher etch rates than SF6/Ar discharges because of the higher volatility of GaClx etch products than GaFx compounds. As the Ar ratio increases in the Cl2/Ar ICP discharges, the etch anisotropy was enhanced due to the improved physical component of the etching. For both plasma chemistries, the GaN etch rate increased continuously as both the ICP source power and rf chuck power increased, and a maximum etch rate of 251.9 nm/min was obtained at 13Cl2/2Ar, 750W ICP power, 400W rf chuck power and 10 mTorr condition.
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