CH4 플라즈마에 따른 TiN 박막 표면의 식각특성 연구
The Etch Characteristics of TiN Thin Film Surface in the CH4 Plasma
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In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to SiO₂ and HfO₂) of TiN thin films in the CH₄/Ar inductively coupled plasma. The maximum etch rate of 274/ min for TiN thin films was obtained at CH4(80%)/Ar(20%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as RF power, Bias power, and process pressure. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the CH₄ containing plasmas.
Abstract
In this study, we carried out an investigation of the etching characteristics (etch rate, selectivity to SiO₂ and HfO₂) of TiN thin films in the CH₄/Ar inductively coupled plasma. The maximum etch rate of 274/ min for TiN thin films was obtained at CH4(80%)/Ar(20%) gas mixing ratio. At the same time, the etch rate was measured as function of the etching parameters such as RF power, Bias power, and process pressure. The X-ray photoelectron spectroscopy analysis showed an efficient destruction of the oxide bonds by the ion bombardment as well as showed an accumulation of low volatile reaction products on the etched surface. Based on these data, the ion-assisted chemical reaction was proposed as the main etch mechanism for the CH₄ containing plasmas.
참고문헌 (9)
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