V2O5 박막의 Cl₂/Ar 유도결합 플라즈마 식각
Cl2/Ar inductively coupled plasma etching of V2O5 thin film
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초록
Cl2/Ar 유도결합 플라즈마를 이용하여 V2O5 박막을 식각하였고, 플라즈마 조성, ICP source power, rf chuck power, 공정압력이 V2O5 박막의 식각속도에 미치는 영향을 조사하였다. Cl2 가스 함량이 증가함에 따라 V2O5 박막의 식각속도가 전반적으로 증가하였고, 66.7 Vol% 조건에서 ~82.7 nm/min의 식각속도를 나타었다. ICP source power를 증가시켰을때 500W까지는 식각속도가 증가하다가 그 이상의 power에서는 VClx 식각 반응물 제거 효율 감소로 인해 식각속도가 감소하였다. Rf chuck power와 공정 압력을 증가시킴에 따라 V2O5 박막의 식각속도는 계속적으로 증가하였고, 20Cl2/10Ar, ICP source power 500 W, rf chuck power 250 W, 5 mTorr 조건에서 ~112.4 nm/min의 가장 높은 식각속도가 얻어졌다.
Abstract
V2O5 thin films were etched using Cl2/Ar inductively coupled plasmas, and the effects of plasma composition, ICP source power, rf chuck power, and process pressure on the etch rate of V2O5 thin films were investigated. As the Cl2 gas content in the Cl2/Ar gas mixtures increased, the etch rate of V2O5 thin films generally increased and the etch rate as high as ~82.7 nm/min was obtained at the 66.7 Vol% condition. When the ICP source power increased, the etch rate initially increased up to 500 W, but then decreased at higher power conditions due to the decrease in the removal efficiency of the VClx etch products. The V2O5 etch rate continuously increased with increasing rf chuck power and process pressure, and a maximum etch rate of ~112.4 nm/min was obtained at 20Cl2/10Ar, 500 W ICP source power, 250 W rf chuck power, and 5 mTorr condition.
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