Metal 게이트 전극을 위한 TiN 박막의 건식 식각 특성
Dry etch characteristics of TiN thin film for metal gate electrode
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We investigated the dry-etching mechanism of the TiN thin film using a Cl2/Ar inductively coupled plasma system. To understand the effect of the Cl2/Ar gas mixing ratio, we etched the TiN thin film by varying Cl2/Ar gas mixing ratio. When the gas mixing ratio was 100% Cl2, the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.
Abstract
We investigated the dry-etching mechanism of the TiN thin film using a Cl2/Ar inductively coupled plasma system. To understand the effect of the Cl2/Ar gas mixing ratio, we etched the TiN thin film by varying Cl2/Ar gas mixing ratio. When the gas mixing ratio was 100% Cl2, the highest etch rate was obtained. The chemical reaction on the surface was investigated with X-ray photoelectron spectroscopy (XPS). Scanning electron microscopy (SEM) was used to examine etched profiles of the TiN thin film.
참고문헌 (14)
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