Characterization of broadband dielectric properties of aerosol-deposited Al2O3 thick films
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The dielectric properties of aerosol-deposited Al2O3 thick films were successfully investigated in broadband frequency ranges. Al2O3 thick films have been prepared through aerosol deposition on Cu substrate at room temperature. In order to measurethe dielectric constants (εr) and dielectric losses (tanδ) at microwave frequency, a circular-patch capacitor (CPC) was formedon the Al2O3 films through the photo-lithography process. In order to evaluate the parasitic effect of the CPC structure basedon measurement results, 3-D electromagnetic simulations were performed. After correction of the measured data including theparasitic components of the CPC, it was observed that the εr of the Al2O3 thick films slightly decreased with the increase infrequency from 9.7 at 1 GHz, different from the low-frequency results. The corrected tanδ of the Al2O3 thick films was 0.03at 1 GHz and less than 0.05 up to 5 GHz.
Abstract
The dielectric properties of aerosol-deposited Al2O3 thick films were successfully investigated in broadband frequency ranges. Al2O3 thick films have been prepared through aerosol deposition on Cu substrate at room temperature. In order to measurethe dielectric constants (εr) and dielectric losses (tanδ) at microwave frequency, a circular-patch capacitor (CPC) was formedon the Al2O3 films through the photo-lithography process. In order to evaluate the parasitic effect of the CPC structure basedon measurement results, 3-D electromagnetic simulations were performed. After correction of the measured data including theparasitic components of the CPC, it was observed that the εr of the Al2O3 thick films slightly decreased with the increase infrequency from 9.7 at 1 GHz, different from the low-frequency results. The corrected tanδ of the Al2O3 thick films was 0.03at 1 GHz and less than 0.05 up to 5 GHz.
참고문헌 (25)
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