Dielectric properties of KTN(80/20) thin films with pzt buffer layer for tunable microwave devices
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K(Ta0.80Nb0.20)O3 films with Pb(Zr0.52Ti0.48)O3PZT buffer layer on Pt/Ti/SiO2/Si substrate were fabricated by sol-gel and spincoatingmethod. Structural and electrical properties were measured with variation of the sintering temperature, and theapplicability to microwave materials was investigated. All K(Ta0.80Nb0.20)O3 films showed a cubic crystal structure. Averagegrain size was about 123~193 nm and average thickness of the K(Ta0.80Nb0.20)O3 films was approximately 366 nm. Throughthe AFM results, root mean square roughness (Rrms) of all K(Ta0.80Nb0.20)O3 films was around 6 nm. All K(Ta0.80Nb0.20)O3 filmsshowed a tendency to increase dielectric loss as frequency increased. As the sintering temperature increased, tunability withan applied DC voltage indicated a decreasing tendency. Tunability and temperature coefficient of the K(Ta0.80Nb0.20)O3 filmsintered at 700 oC showed good values of 22.1% at 10 V, -0.594/oC.
Abstract
K(Ta0.80Nb0.20)O3 films with Pb(Zr0.52Ti0.48)O3PZT buffer layer on Pt/Ti/SiO2/Si substrate were fabricated by sol-gel and spincoatingmethod. Structural and electrical properties were measured with variation of the sintering temperature, and theapplicability to microwave materials was investigated. All K(Ta0.80Nb0.20)O3 films showed a cubic crystal structure. Averagegrain size was about 123~193 nm and average thickness of the K(Ta0.80Nb0.20)O3 films was approximately 366 nm. Throughthe AFM results, root mean square roughness (Rrms) of all K(Ta0.80Nb0.20)O3 films was around 6 nm. All K(Ta0.80Nb0.20)O3 filmsshowed a tendency to increase dielectric loss as frequency increased. As the sintering temperature increased, tunability withan applied DC voltage indicated a decreasing tendency. Tunability and temperature coefficient of the K(Ta0.80Nb0.20)O3 filmsintered at 700 oC showed good values of 22.1% at 10 V, -0.594/oC.
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