Energy storage properties of dielectric Bi1.5Zn1.0Nb1.5O7 thick films on flexible metal foil substrates fabricated by aerosol deposition method
0
조회
0
다운로드
3
인용
0
참고문헌
키워드
초록
In this study, we attempted to achieve a high energy density capacitor using nanocrystalline Bi1.5Zn1.0Nb1.5O7 (BZN) thick film,which is paraelectric material having a linear polarization-electric field behavior. Dense BZN thick films with thickness of6~10 μm were deposited on the flexible metal substrates by Aerosol deposition. BZN thick films were annealed at variousannealing conditions (400, 500 and 600 oC for 2 h) and their energy storage properties were characterized. The BZN filmsannealed at 400 oC showed the highest discharged energy density (8.87 J/cm3) at 1400 kV/cm. The relative permittivity, whichis measured with low electric field, was stable up to 250 oC, and the discharged energy density, which is measured with highelectric field, was stable up to 125 oC.
Abstract
In this study, we attempted to achieve a high energy density capacitor using nanocrystalline Bi1.5Zn1.0Nb1.5O7 (BZN) thick film,which is paraelectric material having a linear polarization-electric field behavior. Dense BZN thick films with thickness of6~10 μm were deposited on the flexible metal substrates by Aerosol deposition. BZN thick films were annealed at variousannealing conditions (400, 500 and 600 oC for 2 h) and their energy storage properties were characterized. The BZN filmsannealed at 400 oC showed the highest discharged energy density (8.87 J/cm3) at 1400 kV/cm. The relative permittivity, whichis measured with low electric field, was stable up to 250 oC, and the discharged energy density, which is measured with highelectric field, was stable up to 125 oC.
참고문헌 (32)
- Z. Gao, , Electrochim. Acta, 246(57), pp.507~516 (2017)[DOI]
- J. Ryu, , J. Am. Ceram. Soc., 92(2), pp.524~527 (2009)[DOI]
- B. Laughlin, , Thin Solid Films, 516(10), pp.3294~3297 (2008)[DOI]
- A. I. Kingon, , Nat. Mater., 4, pp.233~237 (2005)[DOI]
- J.-F. Li, , J. Am. Ceram. Soc., 89(2), pp.706~709 (2006)[DOI]
- Y. Zhen, , Mater. Sci. Eng. B, 176(14), pp.1110~1114 (2011)[DOI]
- F. M. Pontes, , Appl. Phys. Lett., 76(17), pp.2433~2435 (2000)[DOI]
- A. Biswas, , Ceram. Int., 38(1), pp.883~886 (2012)[DOI]
- J.-I. Park, , J. Compos. Mater., 50(12), pp.1573~1579 (2015)
- G.-T. Hwang, , Adv. Energy Mater., 5(10), pp.1500051~1500058 (2015)[DOI]
- J. Akedo, , Jpn. J. Appl. Phys., 40(9B), pp.5528~5532 (2001)[DOI]
- X. Cai, , J. Mater. Chem. C, 2(7), pp.1184~1200 (2014)
- Y. Imanaka, , J. Eur. Ceram. Soc., 27(8-9), pp.2789~2795 (2007)[DOI]
- J. Ryu, , Appl. Phys. Lett., 90(15), pp.152901~ (2007)[DOI]
- M.D. Nguyen, , Appl. Phys. Lett., 99(25), pp.252904~ (2011)[DOI]
- Y. Tan, , Sci. Rep., 5, pp.9953~9961 (2015)[DOI]
- H. Tsuda, , IEEE Trans. Ultrason., Ferroelect., Freq. Contr., 55(5), pp.975~979 (2008)[DOI]
- J. Ryu, , J. Am. Ceram. Soc., 91(10), pp.3399~3401 (2008)[DOI]
- S. Kamba, , Phys. Rev. B, 66(5), pp.054106~ (2002)[DOI]
- X. Wang, , J. Am. Cera. Soc., 80(10), pp.2745~2748 (1997)
- W. Ren, , J. Appl. Phys., 89(1), pp.767~774 (2001)[DOI]
- E. K. Michael, , J. Am. Ceram. Soc., 98(4), pp.1223~1229 (2015)[DOI]
- C. Linder, , J. Mech, Phys. Solids, 60(5), pp.882~903 (2012)[DOI]
- S.-B. Kang, , Ceram. Int., 42(1B), pp.1740~1745 (2016)[DOI]
- S.-B. Kang, , IEEE Trans. Dielectr. eletr. Insul., 22(3), pp.1740~1745 (2016)
- J.-J. Choi, , J. Am. Ceram. Soc., 90(11), pp.3389~3394 (2007)[DOI]
- A. K. Zak, , Solid State Sci., 13(1), pp.251~256 (2011)[DOI]
- M. Valant, , J. Am. Ceram. Soc., 83(1), pp.147~153 (2000)[DOI]
- Q. Chen, , Appl. Phys. Lett., 92(12), pp.142909~ (2008)
- B. Chu, , Science, 313(5785), pp.334~336 (2006)[DOI]
- Q. Li, , nature, 523, pp.576~579 (2015)[DOI]
- U. Balachandran, , Jpn. J. App. Phys., 52(5S1), pp.05DA10~ (2013)
