Comparison of dielectric properties between Ag(Ta,Nb)O3 bulk ceramics and thick films on alumina substrate
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Comparative analyses for the Ag(Ta,Nb)O3 bulk ceramics and thick films were performed. Screen printing method was employed to prepare the Ag(Ta,Nb)O3 thick films. For the microwave applications, crystalline and electrical properties were investigated by X-ray diffraction analysis and current-voltage characteristics, respectively. Scanning electron microscopy was also performed to evaluate the surface morphology. Dielectric permittivity of Ag(Ta,Nb)O3 thick films was lower than that of bulk ceramics, while the loss tangent of thick films was higher compared with that of bulk ceramic. Frequency-dependent dielectric permittivity showed that Ag(Ta,Nb)O3 thick film interdigital capacitors have very weak frequency dispersion with low a loss tangent. From the current-voltage characteristics, it was found that the Ag(Ta0.5Nb0.5)O3 bulk ceramics and thick films had NTCR properties.
Abstract
Comparative analyses for the Ag(Ta,Nb)O3 bulk ceramics and thick films were performed. Screen printing method was employed to prepare the Ag(Ta,Nb)O3 thick films. For the microwave applications, crystalline and electrical properties were investigated by X-ray diffraction analysis and current-voltage characteristics, respectively. Scanning electron microscopy was also performed to evaluate the surface morphology. Dielectric permittivity of Ag(Ta,Nb)O3 thick films was lower than that of bulk ceramics, while the loss tangent of thick films was higher compared with that of bulk ceramic. Frequency-dependent dielectric permittivity showed that Ag(Ta,Nb)O3 thick film interdigital capacitors have very weak frequency dispersion with low a loss tangent. From the current-voltage characteristics, it was found that the Ag(Ta0.5Nb0.5)O3 bulk ceramics and thick films had NTCR properties.
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