Effect of thickness on moisture barrier properties of aluminum oxide using ozone-based atomic layer deposition
0
조회
0
다운로드
1
인용
0
참고문헌
키워드
초록
Among various thin film encapsulation (TFE) methods, thin films prepared by atomic layer deposition (ALD) have been shownto provide superior protection against the permeation of moisture and oxygen. This technique has numerous of advantagessuch as excellent uniformity, precise thickness control, and strong adhesion. Therefore, with ozone-based ALD, we conductedthe influence of the thickness of aluminum oxide (Al2O3) on moisture barrier properties. From the results of an electricalcalcium test, Al2O3 had two distinctly different permeation regimes. Between 10 and 25 nm of Al2O3 thickness, the water vaportransmission rate (WVTR) decreased exponentially from 6.3 × 10−3 to 1.0 × 10−4 g m−2 day−1 (1/60 times). In contrast, asthickness increased from 25 to 100 nm, the WVTR values decreased by only two-thirds, from 1.0 × 10−4 to 6.6 × 10−5 g·m−2·day−1. Tobetter understand the change from an exponential to a sub-exponential regime, defect density and refractive index of Al2O3were measured. The thickness dependence on defect density and refractive index was analogous with one of moisture barrierperformance. These results confirmed the existence of a critical thickness at which the WVTR decreased drastically.
Abstract
Among various thin film encapsulation (TFE) methods, thin films prepared by atomic layer deposition (ALD) have been shownto provide superior protection against the permeation of moisture and oxygen. This technique has numerous of advantagessuch as excellent uniformity, precise thickness control, and strong adhesion. Therefore, with ozone-based ALD, we conductedthe influence of the thickness of aluminum oxide (Al2O3) on moisture barrier properties. From the results of an electricalcalcium test, Al2O3 had two distinctly different permeation regimes. Between 10 and 25 nm of Al2O3 thickness, the water vaportransmission rate (WVTR) decreased exponentially from 6.3 × 10−3 to 1.0 × 10−4 g m−2 day−1 (1/60 times). In contrast, asthickness increased from 25 to 100 nm, the WVTR values decreased by only two-thirds, from 1.0 × 10−4 to 6.6 × 10−5 g·m−2·day−1. Tobetter understand the change from an exponential to a sub-exponential regime, defect density and refractive index of Al2O3were measured. The thickness dependence on defect density and refractive index was analogous with one of moisture barrierperformance. These results confirmed the existence of a critical thickness at which the WVTR decreased drastically.
참고문헌 (30)
- S.-H.K. Park, , Electrochem. Solid State Lett, 8, pp.H21~H23 (2005)
- S. Shin, , J. Vac. Sci. Technol. A, 35, pp.021514~ (2017)
- J. -S. Park, , Semicond. Sci. Technol, 26, pp.034001~ (2011)
- A. P. Ghosh, , Appl. Phys. Lett, 86, pp.223503~ (2005)
- P. F. Carcia, , Appl. Phys. Lett, 89, pp.031915~ (2006)
- J. S. Lewis, , IEEE J. Sel. Top. Quantum Electron, 10, pp.45~57 (2004)
- A. G. Erlat, , J. Phys. Chem. B, 108, pp.883~890 (2004)
- P. F. Carcia, , J. Appl. Phys, 106, pp.23533~ (2009)
- H. Jung, , J. Appl. Phys, 115, pp.073502~ (2014)
- E. Langereis, , Appl. Phys. Lett, 89, pp.081915~ (2006)
- S. M. George, , Chem. Rev, 110, pp.111~131 (2010)
- 신석윤, "원자층증착 기술: 개요 및 응용분야", 한국재료학회지, 23(8), pp.405~422 (2013), 한국재료학회
- S. -W. Seo, , Appl. Phys. Exp, 5, pp.035701~ (2012)
- M. D. Groner, , Chem. Mater, 16, pp.639~645 (2004)
- A. A. Dameron, , J. Phys. Chem. C, 112, pp.45734580~ (2008)
- K. -L. Jarvis, , Thin Solid Films, 624, pp.111~ (2017)
- A. S. da Silva Sobrinho, , J. Vac. Sci. Technol. A, 18, pp.149~157 (2000)
- M. D. Groner, , Appl. Phys. Lett, 88, pp.051907~ (2006)
- S. Jakschik, , Thin Solid Films, 425(1-2), pp.216~220 (2003)
- A. Cappella, , Adv. Eng. Mater, 15(11), pp.1046~1050 (2013)
- H. Choi, , J. Vac. Sci. Technol. A, 34, pp.01~ (2016)
- P. F. Carcia, , Appl. Phys. Lett, 97, pp.221901~ (2010)
- J. Meyer, , Appl. Phys. Lett, 96, pp.243308~ (2010)
- Z. Zhu, , Jpn. J. Appl. Phys, 57, pp.125502~ (2018)
- J. Oh, , Thin solid films, 599, pp.119~124 (2016)
- R. Paetzold, , Rev. Sci. Instrum, 74, pp.5147~5150 (2003)
- S. Schubert, , Rev. Sci. Instrum, 82, pp.094101~ (2011)
- A. -M. Andringa, , ACS Appl. Mater. Interfaces, 7, pp.22525~22532 (2015)
- Y. Liu, , J. Aerosol Sci, 39, pp.974~986 (2008)
- Y. Etinger-Geller, , Chem. Mater, 29, pp.4912~ (2017)