Microwave Noise Model with the Influence of Shot Noise induced by the Gate Leakage Current for Sub-Micron Gate-Length High Electron Mobility Transistors
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A microwave noise model taking into account the influence of shot noise induced by the gate leakage current is introduced, which accurately explains the observed minimum noise figure of sub-micron gatelength HEMT's as a function of frequency. Based on the steady-state Nyquist theorem for multi-terminal devices recently reported [1], the minimum noise figure and the corresponding optimum source impedance of the microwave field effect transistors are expressed as functions of the measurable device parameters including noise spectral densities and small-signal circuit parameters. These formulas also can be shown to reduce to a simple form, i.e. an empirical relation with two fitting constants, which can explain very well the experimental findings of the sub-micron gate-length high electron mobility transistors over the extended microwave frequency range and also provide the information required for the low noise design of microwave field effect transistors.
Abstract
A microwave noise model taking into account the influence of shot noise induced by the gate leakage current is introduced, which accurately explains the observed minimum noise figure of sub-micron gatelength HEMT's as a function of frequency. Based on the steady-state Nyquist theorem for multi-terminal devices recently reported [1], the minimum noise figure and the corresponding optimum source impedance of the microwave field effect transistors are expressed as functions of the measurable device parameters including noise spectral densities and small-signal circuit parameters. These formulas also can be shown to reduce to a simple form, i.e. an empirical relation with two fitting constants, which can explain very well the experimental findings of the sub-micron gate-length high electron mobility transistors over the extended microwave frequency range and also provide the information required for the low noise design of microwave field effect transistors.