In0.8Ga0.2As HEMT 소자에서 Output-conductance가 차단 주파수에 미치는 영향에 대한 연구
Effect of Output-conductance on Current-gain Cut-off frequency in In0.8Ga0.2As High-Electron-mobility Transistors
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The impact of output conductance (go) on the short-circuit current-gain cut-off frequency (fT) in In0.8Ga0.2As high-electron-mobilitytransistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of fT in a simplified small-signalmodel (SSM) of the HEMTs, derive an analytical formula for fT in terms of the extrinsic model parameters of the simplified SSM, whichare related to the intrinsic model parameters of a general SSM, and verify its validity for devices with Lg from 260 to 25 nm. In longchanneldevices, the effect of the intrinsic output conductance (goi) on fT was negligible. This was because, from the simplified SSMperspective, three model parameters, such as gm_ext, Cgs_ext and Cgd_ext, were weakly dependent on goi. However, in short-channel devices,goi was found to play a significant role in degrading fT as Lg was scaled down. The increase in goi in short-channel devices caused aconsiderable reduction in gm_ext and an overall increase in the total extrinsic gate capacitance, yielding a decrease in fT with goi. Finally,the results were used to infer how fT is influenced by goi in HEMTs, emphasizing that improving electrostatic integrity is also criticalimportance to benefit fully from scaling down Lg.
Abstract
The impact of output conductance (go) on the short-circuit current-gain cut-off frequency (fT) in In0.8Ga0.2As high-electron-mobilitytransistors (HEMTs) on an InP substrate was investigated. An attempted was made to extract the values of fT in a simplified small-signalmodel (SSM) of the HEMTs, derive an analytical formula for fT in terms of the extrinsic model parameters of the simplified SSM, whichare related to the intrinsic model parameters of a general SSM, and verify its validity for devices with Lg from 260 to 25 nm. In longchanneldevices, the effect of the intrinsic output conductance (goi) on fT was negligible. This was because, from the simplified SSMperspective, three model parameters, such as gm_ext, Cgs_ext and Cgd_ext, were weakly dependent on goi. However, in short-channel devices,goi was found to play a significant role in degrading fT as Lg was scaled down. The increase in goi in short-channel devices caused aconsiderable reduction in gm_ext and an overall increase in the total extrinsic gate capacitance, yielding a decrease in fT with goi. Finally,the results were used to infer how fT is influenced by goi in HEMTs, emphasizing that improving electrostatic integrity is also criticalimportance to benefit fully from scaling down Lg.
참고문헌 (12)
- T. Takahashi, "InAlAs", InGaAs HEMTs with minimum noise figure of 1. 0 dB at 94 GHz, 2007, 55~58
- J. M. Hornibrook, "Cryogenic control architecture for large-scale quantum computing", Phys. Rev. Appl., 3, pp.024010(1)~024010(9) (2015)
- K. M. H. Leong, "850GHz receiver and transmitter front-end using InP HEMT", IEEE Trans. THz Sci. Technol, 7(4), pp.466~475 (2017)
- W. R. Deal, "A 660 GHz up-converter for THz communications", Proc. IEEE Compd Semicond. Integr. Circuit Symp. (CSICS), pp.1~4 (2017)
- A. Tessmann, "A 300GHz low-noise amplifier S-MMIC for use in next-generation imaging and communication applications", Proc. IEEE MTT-S Int. Microw. Symp, pp.760~763 (2017)
- E. -Y. Chang, "InAs thin-channel high-electron-mobility transistors with very high current-gain cutoff frequency for emerging submillimeter-wave applications", Appl. Phys. Exp., 6(3), pp.034001(1)~034001(3) (2013)
- H. -B. Jo, "Lg = 25 nm InGaAs", InAlAs high-electron mobility transistors with both fT and fmax in excess of 700 GHz, 2019, pp.12(5), 054006(1)~054006(4)
- I. H. Rodrigues, "On the angular dependence of InP high electron mobility transistors for cryogenic low noise amplifiers in a magnetic field", AIP Adv, 9(8), pp.085004(1)~085004(4) (2019)
- T. Takahashi, "Enhancement of fmax to 910 GHz by adopting asymmetric gate recess and double-side-doped structure in 75-nm-gate InAlAs", InGaAs HEMTs, 2017, pp.64(1), 89~95
- H. Sugiyama, "Metal-organic vapor-phase epitaxy growth of InP-based HEMT structures with InGaAs", InAs composite channel, 2012, 245~248
- D. -Y. Yun, "Impact of the source-to-drain spacing on the DC and RF characteristics of InGaAs", InAlAs high-electron mobility transistors, 2018, pp.39(12), 1844~1847
- S. Y. Chou, "Relationship between measured and intrinsic transconductances of FET’s", IEEE Trans. Electron Devices, 34(2), pp.448~450 (1987)