Large-Signal MOSFET Modeling and Parameter Extraction for High-Frequency IC Design
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We propose a new MOSFET large-signal model including the substrate network and bias-dependent gate-drain capacitance (Cgd) for RF IC design applications. In addition, an accurate parameter extraction technique is developed to apply for this BSIM3v3 RF model. The superiority of the substrate network to conventional ones is verified by observing good agreements between measured and modeled effective drain-source resistance and capacitance up to 10 GHz. Better agreements with measured power gain are achieved by using the bias-dependent Cgd model rather than the bias-independent one, verifying the accuracy of the proposed model and extraction technique.
Abstract
We propose a new MOSFET large-signal model including the substrate network and bias-dependent gate-drain capacitance (Cgd) for RF IC design applications. In addition, an accurate parameter extraction technique is developed to apply for this BSIM3v3 RF model. The superiority of the substrate network to conventional ones is verified by observing good agreements between measured and modeled effective drain-source resistance and capacitance up to 10 GHz. Better agreements with measured power gain are achieved by using the bias-dependent Cgd model rather than the bias-independent one, verifying the accuracy of the proposed model and extraction technique.