다결정 3C-SiC 박막 다이오드의 전기적 특성
Electrical characteristics of polycrystalline 3C-SiC thin film diodes
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Abstract
This paper describes the electrical characteristics of polycrystalline (poly) 3C-SiC thin film diodes, in which poly 3C-SiC thin films on n-type and p-type Si wafers, respectively, were deposited by APCVD using HMDS, H2, and Ar gasat 1150o(Vbi), breakdown voltage, thickness of depletion layer, and doping concentration (ND) value were measured as 0.84 V,over 140 V, 61 nm, and 2.7×1019 cm3, respectively. Moreover, for the good ohmic contact, Al/poly 3C-SiC/Si (n-type)structure was annealed at 300, 400, and 50oC, respectively for 30 min under the vacuum condition of 5.0×106 Tor.Finally, the p-n junction diodes fabricated on the poly 3C-Si/Si (p-type) were obtained like characteristics of single 3C-Si fabrication technology.
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