초고온 MEMS용 단결정 3C-SiC의 Ohmic Contact 형성

Abstract

This paper describes the ohmic contact formation of single crystalline 3C-SiC thin films heteroepitaxially grown onSi(001) wafers. In this work, a TiW (Titanium-tungsten) film as a contact matieral was deposited by RF magnetron sputterprocess respectively. Contact resistivities between the TiWfilm and the n-type 3C-SiC substrate were measured by the C-TLM (circular transmision line model) method. The contactphases and interface the TiW/3C-SiC were evaulated with XRD (X-ray diffraction), SEM (scanning electron microscope)and AES (Auger electron spectroscopy) depth-profiles, respectively. The TiW film annealed at 1000oC for 45 sec withthe RTA play am important role in formation of ohmic contact with the 3C-SiC substrate and the contact resistance isless than 4.62× 104 Ω. cm2. Moreover, the inter-difusion at TiW/3C-SiC interface was not generated during before andafter annealing, and kept stable state. Therefore, the ohmic contact formation technology of single crystalline 3C-SiC usingthe TiW film is very suitable for high temperature MEMS applications.