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순 아르콘 캐리어 가스와 APCVD로 성장된 다결정 3C-SiC 박막의 기계적 특성

Mechanical characteristics of polycrystalline 3C-SiC thin films using Ar carrier gas by APCVD

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주제분류공학일반

초록

Abstract

This paper describes the mechanical characteristics of poly 3C-SiC thin films grown on Si wafers with thermal oxide.HMDS at 1100oC. The elastic modulus and hardness of poly 3C-SiC thin films were measured using nanoindentation.Also, the roughness of surface was investigated by AFM. The resulting values of elastic modulus E, hardness H and theroughness of the poly 3C-SiC film are 305 GPa, 26 GPa and 49.35 nm respectively. The mechanical properties of thegrown poly 3C-SiC film are better than bulk Si wafers. Therefore, the poly 3C-SiC thin film is suitable for abrasion,high frequency and MEMS applications.

참고문헌 (13)

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