논문KCI 등재
순 아르콘 캐리어 가스와 APCVD로 성장된 다결정 3C-SiC 박막의 기계적 특성
Mechanical characteristics of polycrystalline 3C-SiC thin films using Ar carrier gas by APCVD
1
조회
0
다운로드
3
인용
0
참고문헌
주제분류공학일반
초록
Abstract
This paper describes the mechanical characteristics of poly 3C-SiC thin films grown on Si wafers with thermal oxide.HMDS at 1100oC. The elastic modulus and hardness of poly 3C-SiC thin films were measured using nanoindentation.Also, the roughness of surface was investigated by AFM. The resulting values of elastic modulus E, hardness H and theroughness of the poly 3C-SiC film are 305 GPa, 26 GPa and 49.35 nm respectively. The mechanical properties of thegrown poly 3C-SiC film are better than bulk Si wafers. Therefore, the poly 3C-SiC thin film is suitable for abrasion,high frequency and MEMS applications.
참고문헌 (13)
- "“Review on material microsensors and devices for hightemperature and harsh environment applications”", 48, pp.249~257 (2001)
- "“Silicon carbide as a new MEMS technology”", 82, pp.210~218 (2000)
- "“Evaluation of MEMS materials of construction for implantable medical devices”", 23, pp.2727~2750 (2002)
- "“Recent developments in SiC”", pp.2~12 (1989)
- "“Production of large-area single-crystal wafers of cubic SiC for semiconductor devices”", nishi, pp.460~467 (1983)
- "“Progress in silicon carbide semiconductor technology”", pp.495~505 (1992)
- "“Recent progress toward manufacturable polycrystalline SiC surface micromachining technology”", 4, pp.441~448 (2004)
- "“Growth of SiC using hexamethyldisilane in a hydrogen-poor ambient”", nishi(rfell), pp.1647~1649 (1994)
- "“Growth of ploycrystalline 3C-SiC thin films using HMDS single precursor”", 20(2), pp.155~161 (2007)
- "“An improved technique for determining hardness and elastic modulus using load and displacement sensing indentation experiments”", pp.1564~1583 (1992)
- "Fracture strength, elastic modulus and poisson's ration of polcrystalline 3C-SiC thinfilm silicon carbide found by microsample tensile testing”,", 125, pp.34~40 (2005)
- "“Growth of polycrystalline 3C-SiC thin films for M", NEMS applications by CVD”, 2007, pp.16(2), 85~90
- "Ultrahigh and microwave frequency nanomechanical system", pp.30~37 (2004), Ph. D. Thesis, California Institute of Technology
관련 논문AI추천
CVD에 의한 M/NEMS용 다결정 3C-SiC 박막 성장김강산, 정귀상, 정준호한국센서학회 · 센서학회지2007 · 제16권 제2호AlN 버퍼층위에 성장된 M/NEMS용 다결정 3C-SiC 박막의 특성김강산, 이종화, 정귀상한국센서학회 · 센서학회지2007 · 제16권 제6호3C-SiC 버퍼층위에 증착된 M/NEMS용 다결정 AlN 박막의 특성이태원, 정귀상한국센서학회 · 센서학회지2007 · 제16권 제6호도핑농도에 따른 다결정 3C-SiC 박막의 기계적 특성김강산, 정귀상한국센서학회 · 센서학회지2008 · 제17권 제4호Influence of Carbonization Conditions in Hydrogen Poor Ambient Conditions on the Growth of 3C-SiC Thin Films by Chemical Vapor Deposition with a Single-Source Precursor of Hexamethyldisilane김강산, 정귀상한국센서학회 · 센서학회지2013 · 제22권 제3호다결정 3C-SiC 박막 다이오드의 전기적 특성안정학, 정귀상한국센서학회 · 센서학회지2007 · 제16권 제4호
이 간행물의 다른 논문 (11건)
확장성이 고려된 IEEE-802.15.4 기반의 저전력 범용 센서노드 설계 및 제작정완영, 장성균, 신광식pp. 247-253Cure real monitering sensor for UV curable thin epoxy film based on side-polished single mode fiber김광택, 황보성, 강용철pp. 254-258다결정 3C-SiC 박막 다이오드의 전기적 특성정귀상, 안정학pp. 259-262선형 전기접촉으로 계측해상도가 향상된 저항성 변위센서차은종, 김경아, 최성수pp. 263-269GPS-based real-time location-aware system in outdoor environmentErin-Ee-Lin Lau, 신광식, 정완영pp. 270-276
