졸-겔 공법으로 제작된 SnO2 박막 트랜지스터의 광전기적 특성
Optoelectronic Properties of Sol-gel Processed SnO2 Thin Film Transistors
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In this study, a highly crystalline SnO2 thin film was formed using a sol–gel process. In addition, a SnO2 thin-film transistor was successfullyfabricated. The fabricated SnO2 thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1cm2 V-1 s-1, an on/off current ratio of 1.2 × 105 , and a subthreshold swing of 2.69. The formed SnO2 had a larger bandgap(3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 ×10-6 Jones, gain of 1.43 × 107 , detectivity of 2.75 ×10-6cm Hz1/2W-1, and photosensitivity of 4.67 ×102 .
Abstract
In this study, a highly crystalline SnO2 thin film was formed using a sol–gel process. In addition, a SnO2 thin-film transistor was successfullyfabricated. The fabricated SnO2 thin-film transistor exhibited conventional n-type semiconductor properties, with a mobility of 0.1cm2 V-1 s-1, an on/off current ratio of 1.2 × 105 , and a subthreshold swing of 2.69. The formed SnO2 had a larger bandgap(3.95 eV) owing to the bandgap broadening effect. The fabricated photosensor exhibited a responsivity of 1.4 ×10-6 Jones, gain of 1.43 × 107 , detectivity of 2.75 ×10-6cm Hz1/2W-1, and photosensitivity of 4.67 ×102 .
참고문헌 (18)
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