InGaZnO 용액의 농도가 Drop-casting으로 제작된 산화물 박막 트랜지스터의 전기적 특성에 미치는 영향
Effect of InGaZnO Solution Concentration on the Electrical Properties of Drop-Cast Oxide Thin-Film Transistors
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Drop casting, a solution process, is a simple low-cost fabrication technique that does not waste material. In this study, we elucidate the effect of the concentration of a InGaZnO solution on the electrical properties of drop-cast oxide thin-film transistors. The higher the concentration the larger the amount of remnant InGaZnO solutes, which yields a thicker thin film. Accordingly, the electrical properties were strongly dependent on the concentration. At a high concentration of 0.3 M (or higher), a large current flowed but did not lead to switching characteristics. At a concentration lower than 0.01 M, switching characteristics were observed, but the mobility was small. In addition to a high mobility, sufficient switching characteristics were obtained at a concentration of 0.1 M owing to the appropriate thickness of the semiconductor layer. This study provides a technical basis for the low-cost fabrication of switching devices capable of driving a sensor array.
Abstract
Drop casting, a solution process, is a simple low-cost fabrication technique that does not waste material. In this study, we elucidate the effect of the concentration of a InGaZnO solution on the electrical properties of drop-cast oxide thin-film transistors. The higher the concentration the larger the amount of remnant InGaZnO solutes, which yields a thicker thin film. Accordingly, the electrical properties were strongly dependent on the concentration. At a high concentration of 0.3 M (or higher), a large current flowed but did not lead to switching characteristics. At a concentration lower than 0.01 M, switching characteristics were observed, but the mobility was small. In addition to a high mobility, sufficient switching characteristics were obtained at a concentration of 0.1 M owing to the appropriate thickness of the semiconductor layer. This study provides a technical basis for the low-cost fabrication of switching devices capable of driving a sensor array.
참고문헌 (12)
- S. J. Kim, "Review of solution-processed oxide thin-film transistors", Jpn. J. Appl. Phys., 53(02BA02), pp.1~10 (2014)
- E. Fortunato, "Oxide Semiconductor Thin-Film Transistors : A Review of Recent Advances", Adv. Mater, 24(22), pp.2945~2986 (2012)
- J. W. Park, "A Review of Low-Temperature Solution-Processed Metal Oxide Thin-Film Transistors for Flexible Electronics", Adv. Funct. Mater, 30(1904632), pp.1~40 (2020)
- 허승진, "Recent advances in low-temperature solution-processed oxide backplanes", Journal of Information Display, 14(2), pp.79~87 (2013), 한국정보디스플레이학회[DOI]
- W. H. Lee, "Printed In-Ga-Zn-O drop-based thin film transistors sintered using intensely pulsed white light", RSC Adv, 5, pp.78655~78659 (2015)
- R. D. Deegan, "Contact line deposits in an evaporating drop", Phys. Rev, 62(1), pp.756~765 (2000)
- E. Sowade, "Inkjet-printing of Colloidal Nanospheres : Engineering the Evaporation-Driven Self-Assembly Process to Form Defined Layer Morphologies", Nanoscale Res. Lett, 10(362), pp.1~9 (2015)
- Y. S. Rim, "Boost up Mobility of Solution-Processed Metal Oxide Thin-Film Transistors via Confining Structure on Electron Pathways", Adv. Mater, 26(25), pp.4273~4278 (2014)
- D. E. Walker, "High Mobility Indium Zinc Oxide Thin Film Field-Effect Transistors by Semiconductor Layer Engineering", ACS. Appl. Mater. interfaces, 4(12), pp.6835~6841 (2012)
- X. Liu, "Rational Design of Amorphous Indium Zinc Oxide", Carbon Nanotube Hybride Film for Unique Performance Transistors, 2012, pp.12(7), 3596~3601
- Y. S. Rim, "Low-Temperature Metal-Oxide Thin-Film Transistors Formed by Directly Photopatternable and Combustible Solution Synthesis", ACS Appl. Mater. interfaces, 5(9), pp.3565~3571 (2013)
- S. Y. Lee. D. H. Kim, "Effect of channel thickness on density of states in amorphous InGaZnO thin film transistor", Appl. Phys. Lett, 98(12), pp.122105(1)~122105(3) (2011)